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ROHM UMF6N User Guide

Summary

The UMF6N is a compact, dual transistor package engineered for efficient power management and high-reliability power switching circuits. This manual provides complete technical specifications, including detailed electrical characteristics, absolute maximum ratings, and operational curves for circuit designers. It covers both transistor types (Tr1 and Tr2) housed in one space-saving UMT6 unit, allowing engineers to cut mounting costs and reduce board area when building sophisticated power electronics.

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Page 1 Text Content

UMF6N

Transistors

Power management (dual transistors) UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package.

Application Dimensions (Units : mm)

Power management circuit

Features

1) Power switching circuit in a single package. (6) (5) (4)

2) Mounting cost and area can be cut in half.

Structure (1) (2) (3) Silicon epitaxial planar transistor

ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88

Equivalent circuits

Packaging specifications Type UMF6N Package UMT6

Marking F6 Code TR

Basic ordering unit (pieces)

Rev.B 1/5

Page Summary Contents For ROHM UMF6N User Guide

Page 1 UMF6N Transistors Power management (dual transistors) UMF6N 2SA2018 and 2SK3019 are housed independently in a UMT package. Application Dimensions (Units : mm) Power management circuit Features 1) Powe...
Page 2 UMF6N Transistors Absolute maximum ratings (Ta=25°C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO −15 Collector-emitter voltage VCEO −12 Emitter-base voltage VEBO −6 IC −500 m A Collec...
Page 3 IT TE IN IT ib (p F) LL IO LT UMF6N sa t) LL IC (m LL TO TP IT ob (p F) Transistors Electrical characteristic curves Tr1 Ta =1 °C Ta =2 5° VCE=2V Ta=125°C VCE=2V Ta=25°C Pulsed Pulsed Pulsed Ta −4 0° ...
Page 4 IC IN -S IC IN -S UMF6N IN ID -S IS (o n) -S IS (o n) Transistors Tr2 0.15 200m VDS=3V VDS=3V 3V 100m Pulsed ID=0.1m A Ta=25°C Pulsed Pulsed 50m Ta=125°C −25°C IC IN -S -S IS (o n) IN ID 0.2m VGS=1.5V...
Page 5 UMF6N IN ID Transistors Ta=25°C Ta=25°C Ta=25°C Pulsed f=1MHZ VDD=5V VGS=0V td(off) VGS=5V 50m RG=10Ω Pulsed 10m VGS=4V 0V 5m tr Crss td(on) 0.5 IT p F SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLT...
Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 6
File Size 127.38 KB
Published July 07, 2026
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Frequently Asked Questions

What is the maximum total power dissipation for this transistor?

The absolute maximum rating for power dissipation (PC) is 150 mW (TOTAL).

Can I use these components in critical life-support systems?

For uses that endanger human life, consult a sales representative and implement sufficient safety features like derating.

What should be considered when designing with these parts?

Users must account for the derating characteristics and include sufficient safety measures such as anti-flammability and fail-safe components.