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ROHM UM6K34N User Guide

Summary

The UM6K34N is a high-performance N-channel MOSFET ideal for interfacing and switching in portable electronic equipment due to its exceptionally low 0.9V drive requirement. This comprehensive datasheet provides technical engineers with every detail necessary for reliable circuit design, including absolute maximum ratings, static/dynamic electrical characteristics, detailed operating curves across various temperatures, and precise measurement circuits. Use this reference to implement efficient power management and switching solutions in space-constrained applications.

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Data Sheet

0.9V Drive Nch + Nch MOSFET UM6K34N

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET

UMT6 (SC-88) <SOT-363>

Features (6) (5) (4)

1) Mounting cost and area can be cut in half. 2) Low On-resistance.

3) Low voltage drive(0.9Vdrive)makes this device ideal for portable equipment.

Abbreviated symbol : K34

Application Interfacing, Switching

Inner circuit

Packaging specifications ∗1

Package Taping

Type Code TCN ∗2

(1) Tr1 Source

Basic ordering unit (pieces) (2) Tr1 Gate

(3) Tr2 Drain ∗1

UM6K34N

(4) Tr2 Source (5) Tr2 Gate (1) (2) (3) (6) Tr1 Drain

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS 8 Continuous ID 200 m A

Drain current

Pulsed IDP *1 800 m A

Source current Continuous Is m A

(Body Diode) Pulsed Isp *1 m A

m W / TOTAL

PDPower dissipation *2

m W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land.

Thermal resistance

Parameter Symbol Limits Unit

˚C / W /TOTAL

Channel to Ambient Rth (ch-a)

˚C / W /ELEMENT

* Each terminal mounted on a recommended land.

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© 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A

Page Summary Contents For ROHM UM6K34N User Guide

Page 1 Data Sheet 0.9V Drive Nch + Nch MOSFET UM6K34N Structure Dimensions (Unit : mm) Silicon N-channel MOSFET UMT6 (SC-88) &lt;SOT-363&gt; Features (6) (5) (4) 1) Mounting cost and area can be cut in ha...
Page 2 Data Sheet UM6K34N Electrical characteristics (Ta = 25C) &lt;It is the same ratings for Tr1 and Tr2.&gt; Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=...
Page 3 Data Sheet UM6K34N IC IN -S -S Electrical characteristic curves (Ta=25C) IN [A IS IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) VGS= 4.5V VGS= 2.5V 0.15 VGS= ...
Page 4 Data Sheet UM6K34N IC IN -S -S IC IN -S -S IS IS Fig.7 Static Drain-Source On-State Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Resistance vs. Drain Current(Ⅴ) VGS= 1.5V VGS= 1....
Page 5 Data Sheet UM6K34N IT IT IN IM Fig.14 Typical Capacitance Fig.13 Switching Characteristics vs. Drain-Source Voltage Ta=25°C td(off) VDD=25V VGS=4.5V tf RG=10Ω Pulsed Ta=25°C VDD=25V ID= 0.2A RG=10Ω td...
Page 6 Data Sheet UM6K34N Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms N...
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