ROHM SH8M11 User Guide

Summary

Boost your power switching performance with the SH8M11 N-channel/P-channel MOSFET. Engineered for efficiency and reliability in demanding applications, this device features low on-resistance and a robust SOP8 package suitable for various power circuits. This comprehensive manual serves as the engineer's definitive guide, providing exhaustive technical data including electrical characteristics, absolute maximum ratings, transient thermal analysis, and detailed measurement circuit guides. It is designed specifically for power electronics designers who require precise specifications to optimize switching efficiency and ensure reliable system operation.

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Page 1 Text Content

Data Sheet

4V Drive Nch + Pch MOSFET SH8M11 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET/ SOP8

Silicon P-channel MOSFET

Features 1) Low on-resistance. 2) High power package(SOP8).

3) Low voltage drive(4V drive).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) SH8M11

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source ∗1 ∗1 (4) Tr2 Gate

Absolute maximum ratings (Ta = 25C)

(5) Tr2 Drain (1) (2) (3) (4) Limits (6) Tr2 Drain

Parameter Symbol Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

Tr1 : N-ch Tr2 : P-ch (8) Tr1 Drain

∗2 BODY DIODE

Drain-source voltage VDSS 30

Gate-source voltage VGSS 20 20

Continuous ID 3.5 3.5

Drain current

Pulsed IDP *1 14 12 Source current Continuous Is 1.6 1.6 (Body Diode) Pulsed Isp *1 12 *2

2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C

Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Page Summary Contents For ROHM SH8M11 User Guide

Page 1 Data Sheet 4V Drive Nch + Pch MOSFET SH8M11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ SOP8 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) L...

Page 2 Data Sheet SH8M11 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=±20V, VDS=0V Drain-source breakdown volta...

Page 3 Data Sheet SH8M11 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown volta...

Page 4 Data Sheet SH8M11 Electrical characteristic curves (Ta=25C) IC IN -S -S IS (o IN [A IN [A 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed V...

Page 5 Data Sheet SH8M11 IC IN -S -S IT IN IM IS (o Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Ta=125°C P...

Page 6 Data Sheet SH8M11 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) Coss (VGS=10V) PW=100us PW=1ms PW = 10...

Page 7 Data Sheet SH8M11 IC IN -S -S IN [A IN [A 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C VGS= -3.0V Pulsed VGS= -10V VGS= -2.8V VGS= -4.5V VGS= -4....

Page 8 Data Sheet SH8M11 IT IN IM IC IN -S -S Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= -4.0V VDS= -10V Pulsed Ta= 125°C Puls...

Page 9 Data Sheet SH8M11 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS=-10V) PW=100us Crss PW=1ms PW = 1...

Page 10 Data Sheet SH8M11 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Swi...

Page 11 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	11
File Size	1.27 MB
Published	July 22, 2026

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Frequently Asked Questions

Is ESD protection required when using this product?

Yes, users must consider designing an ESD protection circuit because the product might cause chip aging under large electrified environments.

What type of mounting surface is recommended?

The device must be mounted on a ceramic board for proper operation.

What are the maximum drain-source voltage ratings?

The absolute maximum ratings include VDS limits of -30V to +30V, and also specify body diode voltages.

What is the total allowed power dissipation (PD)?

The total allowable power dissipation (P d) is 2.0 W.

What are the general voltage drive requirements?

The manual specifies gate-source voltage (V gs) ratings of up to +/-20 V for operation.