ROHM SH8K22 User Guide

Summary

This robust Nch+Nch MOSFET is designed for demanding power switching applications, including DC/DC converters and inverters. Featuring built-in protection diodes (G-S and Body) and a compact SOP8 surface mount package, it ensures high reliability across various operating conditions. The comprehensive manual provides detailed specifications on electrical characteristics (like $R_{\text{(on)}}$ and capacitances), absolute maximum ratings, advanced switching analysis, and thermal performance curves. It is essential professional documentation for electronics designers specifying components for power management systems.

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4V Drive Nch+Nch MOSFET SH8K22 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).

Application Power switching, DC / DC converter, Inverter

Each lead has same dimensions

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5) (8) (7) (6) (5)

Type Code TB

Basic ordering unit (pieces)

SH8K22

(1) (2) (3) (4) (1) Tr1 Source Absolute maximum ratings (Ta=25C) (2) Tr1 Gate

(3) Tr2 Source

<It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate

(5) Tr2 Drain

Parameter Symbol Limits Unit (6) Tr2 Drain

(7) Tr1 Drain

∗1 ESD PROTECTION DIODE

Drain-source voltage VDSS (8) Tr1 Drain

∗2 BODY DIODE Gate-source voltage VGSS ±20 ∗A protection diode is included between the gate and the source terminals to protect the diode against static

Continuous ID ±4.5 electricity when the product is in use. Use the protection

Drain current circuit when the fixed voltages are exceeded.

Pulsed IDP *1 ±18 Source current Continuous IS

(Body diode) Pulsed ISP *1

W / TOTAL

Total power dissipation PD *2

1.4 W / ELEMENT

Chanel temperature Tch

Range of Storage temperature Tstg -55 to +150 *1 PW  10ｓ、Duty cycle  1 *2 Mounted on a ceramic board

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM SH8K22 User Guide

Page 1 4V Drive Nch+Nch MOSFET SH8K22 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switchi...

Page 2 Data Sheet SH8K22 Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=...

Page 3 Data Sheet SH8K22 pa ci ta nc [p ta tic ra in -S ou rc n- ta te Electrical characteristic curves ra in ur rn t : [A es is ta nc (o n) [m VGS=10V VGS=4.5V VDS=10V Ta=125o C pulsed pulsed pulsed 75o C ...

Page 4 Data Sheet SH8K22 Measurement circuits Pulse Width VGS ID RL 10%VGS 90% 90% trtd(on) trtd(off) ton toff Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VGS ID IG (Const.) Qgs Qgd C...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	208.25 KB
Published	June 18, 2026

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