ROHM SH8K15 User Guide

Summary

The SH8K15 is a high-performance N-channel MOSFET designed for robust power switching applications in compact electronic designs. Featuring low on-resistance, a built-in G-S Protection Diode, and an ultra-small SOP8 package, it ensures reliable performance in various demanding circuits. This manual provides comprehensive technical specifications, including absolute maximum ratings, detailed electrical curves (I-V characteristics, switching profiles, transient thermal analysis), and application guides necessary for engineers integrating the component into power management and switching systems.

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Data Sheet

4V Drive Nch + Nch MOSFET SH8K15 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features

1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) SH8K15

(1) Tr1 Source ∗2 ∗2

(2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate ∗1 ∗1 (5) Tr2 Drain

Absolute maximum ratings (Ta = 25C)

(6) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

∗2 BODY DIODE

Drain-source voltage VDSS

Gate-source voltage VGSS 20 Continuous ID 9.0

Drain current

Pulsed IDP *1 36

Source current Continuous Is 1.6 (Body Diode) Pulsed Isp *1 *2 2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

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Page Summary Contents For ROHM SH8K15 User Guide

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET SH8K15 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Pa...

Page 2 Data Sheet SH8K15 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet SH8K15 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta [m [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Ou...

Page 4 Data Sheet SH8K15 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=125°C Ta...

Page 5 Data Sheet SH8K15 rm li ra ie rm is ta r（ t） FIg.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) Ta=25°C (VGS = 10V) f=1...

Page 6 Data Sheet SH8K15 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.15 MB
Published	June 17, 2026

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Frequently Asked Questions

What package does the SH8K15 MOSFET use?

It uses a small surface mount SOP8 package.

What is the max drain-source voltage?

The absolute maximum drain-source voltage is 30V.

What is the SH8K15 used for?

It is designed for switching applications.

Does the SH8K15 need ESD protection?

Yes, it has built-in G-S protection diodes, and extra ESD design is recommended.