ROHM SH8K14 User Guide

Summary

This datasheet describes the performance and specifications of SH8K14, an N-channel power MOSFET designed for efficient switching applications. Characterized by low on-resistance and integrated protection features, this surface mount component is ideal for system designs requiring reliable electrical control. The manual provides comprehensive documentation, detailing absolute maximum ratings, precise electrical characteristics, detailed dynamic performance curves (including switching times), and thermal stress analysis essential for engineers selecting optimal components for power efficiency circuits.

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Data Sheet

4V Drive Nch + Nch MOSFET SH8K14 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features

1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) SH8K14

(1) Tr1 Source ∗2 ∗2

(2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate ∗1 ∗1 Absolute maximum ratings (Ta = 25C) (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4)

Parameter Symbol Limits Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 7.0

Drain current

Pulsed IDP *1 28

Source current Continuous Is 1.6 (Body Diode) Pulsed Isp *1 *2 2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

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Page Summary Contents For ROHM SH8K14 User Guide

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET SH8K14 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Pa...

Page 2 Data Sheet SH8K14 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet SH8K14 Electrical characteristic curves (Ta=25C) IC IN -S -S IS (o IN [A IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Ta=25°C Pulsed VGS= ...

Page 4 Data Sheet SH8K14 IT IN IM IC IN -S -S IS (o Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Ta=125°C P...

Page 5 Data Sheet SH8K14 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us Crss Coss PW=1ms PW...

Page 6 Data Sheet SH8K14 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.07 MB
Published	June 04, 2026

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Frequently Asked Questions

What is the device's built-in protection against static discharge?

It features built-in Gate-Source Protection Diode.

What is the total power dissipation limit for this element?

The maximum total power dissipation (PD) is 1.4 W / ELEMENT.

How should I account for thermal stress during operation?

When mounting, note that the normalized transient thermal resistance considers pulse width and drainage current.

What are the key electrical specifications regarding on-state resistance?

The static drain-source on-state resistance (Rds(on)) is typically between 25 and 35 mΩ.