ROHM SH8K11 User Guide

Summary

This comprehensive technical datasheet details the SH8K11 N-channel MOSFET, a low on-resistance power switching component housed in an SOP8 package. The manual provides exhaustive specifications, including absolute maximum ratings, electrical parameters (V/I curves), and thermal resistance data crucial for design validation. It is essential reading for power electronics engineers and designers building reliable DC-DC converters or high-efficiency switching circuits.

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Data Sheet

4V Drive Nch + Nch MOSFET SH8K11 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET SOP8

Features

1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB Basic ordering unit (pieces) SH8K11

(1) Tr1 Source

(2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate

(5) Tr2 Drain

Absolute maximum ratings (Ta = 25C)

(6) Tr2 Drain

Parameter Symbol Limits Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 3.5

Drain current

Pulsed IDP *1 14

Source current Continuous Is 1.6 (Body Diode) Pulsed Isp *1 *2 2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

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Page Summary Contents For ROHM SH8K11 User Guide

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET SH8K11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Pa...

Page 2 Data Sheet SH8K11 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=...

Page 3 Data Sheet SH8K11 Electrical characteristic curves (Ta=25C) IC IN -S -S IS (o IN [A IN [A Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed VGS= 2.8V Ta=...

Page 4 Data Sheet SH8K11 IC IN -S -S IT IN IM IS (o Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Ta=125°C P...

Page 5 Data Sheet SH8K11 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) Coss (VGS=10V) PW=100us PW=1ms PW = 10...

Page 6 Data Sheet SH8K11 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.12 MB
Published	July 15, 2026

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Frequently Asked Questions

What are the absolute maximum ratings for voltage and current?

The body diode drain-source voltage (Vds) is 30 V. For continuous drain current, it's 1.6 A, and pulsed is 14 A.

How is the device rated for temperature extremes?

It has a channel temperature range of 150 °C and a storage temperature range from -55 to +150 °C.

What does the on-state resistance (R(on)) represent?

The static drain-source on-state resistance is typically 90–126 mΩ when current is 3.5A and voltage is 4.5V.

Are there any specific safety precautions I must know before operating this MOSFET?

You must design an ESD protection circuit because the product might cause chip aging and breakdown in a large electrified environment.