ROHM RZR040P01 User Guide

Summary

This technical guide details the specifications for a low-voltage drive P-channel MOSFET, ideal for power switching applications. The manual provides comprehensive data—including absolute maximum ratings, on-resistance characteristics ($R_{ds(on)}$), and timing diagrams—for engineers designing general-use electronic equipment. Features include high power handling in a robust package and efficient operation with only 1.5V gate drive voltage.

📄 Preview ‹ PAGE OF 5 ›

‹

›

Page 1 Text Content

1.5V Drive Pch MOSFET RZR040P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TSMT3

1.0MAX

Features

1) Low on-resistance. 2) High power package.

3) Low voltage drive. (1.5V)

Applications

Each lead has same dimensions(1) Gate

Switching (2) Source

Abbreviated symbol : YE

(3) Drain

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL

Basic ordering unit (pieces)

RZR040P01

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS (1) Gate

∗1 ESD PROTECTION DIODE (2) Source

Gate-source voltage ±10 VVGSS (2)

∗2 BODY DIODE (3) Drain

Continuous ±4 AID 1.

Drain current

Pulsed ±16 AIDP Source current Continuous −0.8 AIS

(Body diode) ∗1

Pulsed −16 AISP Total power dissipation ∗2 1.0 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 125∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board.

1/4 www.rohm.com 2009.06 - Rev.A

Page Summary Contents For ROHM RZR040P01 User Guide

Page 1 1.5V Drive Pch MOSFET RZR040P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Applications E...

Page 2 Data Sheet RZR040P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 Data Sheet RZR040P01 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R )[m Electrical characteristics curves ES IS TA : R on )[m S( AI EN : - [A Ta=25°C VDS= -6V Pulsed VGS= -4.5V Pulsed VG...

Page 4 Data Sheet RZR040P01 AP AC IT AN : C [p F] ST AT IC AI -S -S TA TE ES IS TA : R S( )[m Ta=25°C VDS= -6V Ta=25°C Pulsed Pulsed VDD= -6V ID= -4.0A Ta= -25°C RG=10Ω Ta=25°C Pulsed Ta=75°C ID= -2.0A Ta=12...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	218.15 KB
Published	June 15, 2026

1 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is the maximum ambient temperature range for safe operation?

The storage temperature range (Tstg) is -55 to +150°C, with a channel operating temperature (Tch) of 150°C.

How do I find the voltage ratings for this MOSFET?

The absolute maximum rating specifies a drain-source voltage (VDS) limit of -12 V and supports gate-source voltages (VGSS) up to ±10 V.

What are the guidelines for implementing safety measures?

Users must implement safety measures like derating, redundancy, or fail-safe designs to guard against physical injury or fire upon failure.

What is the static on-state resistance at rated conditions?

The minimum type (Typ.) value for Drain-source on-state (RDS(on)) is 40 mΩ and maximum is 60 mΩ when ID = -2A and VGS = -1.8V.