ROHM RZR025P01 User Guide

Summary

The RZR025P01 is a surface-mount P-channel MOSFET designed for demanding switching applications requiring reliable, low-power operation. Featuring low on-resistance and integrated protection diodes, it provides high efficiency in compact electronic devices. This manual details comprehensive electrical characteristics, absolute maximum ratings, thermal guidelines, and performance curves, equipping engineers with the necessary data to design robust power circuits for general industrial and consumer equipment.

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RZR025P01

Transistors

1.5V Drive Pch MOSFET RZR025P01

Features Dimensions (Unit : mm)

1) Low On-resistance.

TSMT3

2) Built-in G-S Protection Diode. 1.0MAX

3) Small and Surface Mount Package (TSMT3). 0.4 0.7

4) Low voltage drive (1.5V). (3)

Application 0.16

Switching

Each lead has same dimensions(1) Gate

(2) Source

Abbreviated symbol : YC

(3) Drain

Structure Silicon P-channel MOSFET

Packaging specifications Equivalent circuit

Package Taping

Type Code TL

Basic ordering unit (pieces)

RZR025P01

(2) (1) Gate (2) Source

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS

Gate-source voltage ±10 VVGSS

Continuous ±2.5 AID

Drain current

Pulsed ±10 AIDP

Source current Continuous −0.8 AIS

(Body diode) ∗1

Pulsed −10 AISP

Total power dissipation 1.0 WPD Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance Parameter Symbol Limits Unit Channel to ambient °C / WRth (ch-a) ∗ When mounted on a ceramic board.

Page Summary Contents For ROHM RZR025P01 User Guide

Page 1 RZR025P01 Transistors 1.5V Drive Pch MOSFET RZR025P01 Features Dimensions (Unit : mm) 1) Low On-resistance. TSMT3 2) Built-in G-S Protection Diode. 1.0MAX 3) Small and Surface Mount Package (TSMT3). 0...

Page 2 RZR025P01 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12...

Page 3 TA TI IN -S -S TA TE TA TI IN -S -S TA TE IS TA on ) [ IS TA S( on ) [ S( IN EN -I [A RZR025P01 Transistors Electrical characteristic curves Ta=25℃ VGS= -10V Ta=25℃ VDS= -6V Pulsed VGS= -4.5V Pulsed P...

Page 4 TA TI IN -S -S TA TE IT [p F] IS TA S( on ) [ RZR025P01 Transistors Ta=25℃ Ta=25℃ VDS= -6V Pulsed VDD= -6V Pulsed ID= -2.5A RG=10Ω Pulsed ID= -2.5A ID= -1.2A Ta= -25℃ Ta=25℃ Ta=75℃ Ta=125℃ IT IN IM t ...

Page 5 RZR025P01 Transistors Measurement circuits Pulse width VGS VGS VDS 10% trtd(on) tftd(off) ton toff Fig.15 Switching Time Test Circuit Fig.16 Switching Time Waveforms VGS ID IG (Const.) Qgs Qgd Charge ...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	191.76 KB
Published	June 18, 2026

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Frequently Asked Questions

Can I use this component in life-critical equipment like medical devices?

No, for equipment requiring extremely high reliability and safety monitoring, consult a sales representative and implement necessary fail-safe measures.

What is the maximum total power dissipation (PD) rating?

The parameter PD specifies a limit of 1.0 W.

Does this transistor have built-in protection features?

Yes, it includes a built-in G-S Protection Diode and an ESD PROTECTION DIODE.