ROHM RZR020P01 User Guide

Summary

This comprehensive datasheet details the RZR020P01 Silicon P-channel MOSFET, an ideal component for low-power switching applications due to its minimized on-resistance. The manual provides engineers with complete technical specifications, including detailed electrical characteristics, thermal ratings, body diode performance curves, and packaging guides. It is designed for professional use in general electronics and automation equipment such as communication devices, audio/visual gear, and office appliances.

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1.5V Drive Pch MOSFET RZR020P01

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT3

1.0MAX

Features (3)

1) Low on-resistance. 0~0.1

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT3).

Each lead has same dimensions(1) Gate

4) Low voltage drive (1.5V). (2) Source

Abbreviated symbol : ZE

(3) Drain

Applications Inner circuit Switching

Packaging specifications

Package Taping ∗2

Type Code TL

Basic ordering unit (pieces) ∗1

RZR020P01 1. 2.

(2) (1) Gate (2) Source

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS

Gate-source voltage ±10 VVGSS

Continuous ±2 AID

Drain current

Pulsed ±6 AIDP Source current Continuous −0.8 AIS

(Body diode) ∗1

Pulsed −6 AISP

Total power dissipation 1.0 WPD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board.

Thermal resistance Parameter Symbol Limits Unit Channel to ambient °C / WRth (ch-a) ∗ When mounted on a ceramic board.

Page Summary Contents For ROHM RZR020P01 User Guide

Page 1 1.5V Drive Pch MOSFET RZR020P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX Features (3) 1) Low on-resistance. 0~0.1 2) Built-in G-S Protection Diode. 3) Small and Surface M...

Page 2 RZR020P01 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 RZR020P01 Data Sheet Electrical characteristics curves ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m ES IS TA : R S( on )[m AI EN : - [A Ta=25°C Ta=25°C VDS= -6V 3.5 Pulsed-10...

Page 4 RZR020P01 Data Sheet VGS=0V Ta=25°C Ta=25°C VDD= -6V AT E- SO VO LT AG : - V] EV ER SE AI EN : - Is [A Pulsed Pulsed td(off) VGS=-4.5V RG=10Ω Pulsed tf ID= -1A ID= -2A Ta=125°C 0.1 Ta=75°C Ta=25°C tr ...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	220.48 KB
Published	July 16, 2026

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Frequently Asked Questions

Can this MOSFET be used in life-critical machinery?

No. It cannot be used for systems requiring extremely high reliability, such as medical instruments or aerospace equipment.

What is the maximum continuous drain current (ID) it can handle?

The datasheet specifies a maximum continuous Drain current of ±2 A.

Is this component suitable for use in radiation-tolerant environments?

No. The product is not designed to be radiation tolerant.

What is the typical total power dissipation ($P_D$) limit?

The total power dissipation ($P_D$) is limited to 1.0 W.