ROHM RXQ040N03 User Guide

Summary

Datasheet for ROHM RXQ040N03 N-channel 30V 4A power MOSFET in compact TSMT6 surface mount package. Features low on-resistance (50mΩ maximum at VGS=10V, ID=4A), built-in G-S protection diode, and Pb-free lead plating compliant with RoHS directive. Absolute maximum ratings include 30V drain-source voltage, 4A continuous drain current, 12A pulsed drain current, ±20V gate-source voltage, 1.25W power dissipation, and 150°C junction temperature. Electrical characteristics specify gate threshold voltag

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RXQ040N03 Nch 30V 4A Power MOSFET Datasheet

l Outline

VDSS 30V TSMT6

RDS(on) (Max.) (4)

ID 4A (1)

PD 1.25W

l Features l Inner circuit

1) Low on - resistance. (1) Drain (2) Drain

2) Built-in G-S Protection Diode. (3) Gate

(4) Source

3) Small Surface Mount Package (TSMT6).

(5) Drain (6) Drain

4) Pb-free lead plating ; Ro HS compliant

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

l Packaging specifications Packaging Taping Reel size (mm)

l Application

Tape width (mm)

DC/DC converters

Type Basic ordering unit (pcs) 3,000 Taping code TR Marking XQ

l Absolute maximum ratings(Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS *1

Continuous drain current ID 4.0

Pulsed drain current ID,pulse 12

Gate - Source voltage VGSS 20 *3

PD 1.25

Power dissipation

PD 0.6

Junction temperature Tj °C Range of storage temperature Tstg -55 to +150 °C

Page Summary Contents For ROHM RXQ040N03 User Guide

Page 1 RXQ040N03 Nch 30V 4A Power MOSFET Datasheet l Outline VDSS 30V TSMT6 RDS(on) (Max.) (4) ID 4A (1) PD 1.25W l Features l Inner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protec...

Page 2 Data Sheet RXQ040N03 l Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient Rth JA °C/W Thermal resistance, junction - ambient Rth JA °C/W l Electri...

Page 3 Data Sheet RXQ040N03 l Electrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V Coss VDS = 10V p FOutput capacitance Reverse transfe...

Page 4 Data Sheet RXQ040N03 rm liz ra ie rm is ta is ip ti /P l Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Operation in this area PW = 100μs is ...

Page 5 Data Sheet RXQ040N03 ra in rr l Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) VGS=10.0V VGS=4.5V Ta=25°C VGS=10.0V VGS=3.0V VGS=4.0V...

Page 6 Data Sheet RXQ040N03 ra in rc re lt te re ld lt [V (B )D l Electrical characteristic curves Fig.7 Breakdown Voltage Fig.8 Typical Transfer Characteristics vs. Junction Temperature VDS=10V VGS=0V pulse...

Page 7 Data Sheet RXQ040N03 ta ti ra in rc -S ta te is ta ra in rr is ip ti l Electrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate ...

Page 8 Data Sheet RXQ040N03 ta ti ra in rc -S ta te is ta ta ti ra in rc -S ta te is ta l Electrical characteristic curves Fig.15 Static Drain-Source On-State Fig.16 Static Drain - Source On - State Resistan...

Page 9 Data Sheet RXQ040N03 te rc lt it l Electrical characteristic curves Fig.18 Typical Capacitance Fig.19 Switching Characteristics vs. Drain - Source Voltage VDD≒15V Ta=25°C VGS=10V f=1MHz RG=10Ω VGS=0V ...

Page 10 Data Sheet RXQ040N03 l Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com © 2...

Page 11 Data Sheet RXQ040N03 l Dimensions (Unit : mm) TSMT6 Patterm of terminal position areas MILIMETERS INCHES MIN MAX MIN MAX HE 2.60 3.00 0.102 0.118 L1 0.30 0.60 0.012 0.024 Lp 0.40 0.70 0.016 0.028 MILI...

Page 12 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	12
File Size	787.20 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the continuous drain current (ID) rating?

The continuous drain current is rated at up to 4.0 A.

Can this device handle single-pulse currents?

Yes, it can handle pulsed drain currents up to 12 A through circuit operation and a maximum of 2 A during the pulse.

What is the recommended thermal resistance for mounting on a ceramic board?

The thermal resistance (junction - ambient) is typically rated at 100 °C/W when mounted on a ceramic board (30×30×0.8mm).

How does this MOSFET comply with environmental standards?

It features Pb-free lead plating and is RoHS compliant.