ROHM RXH100N03 User Guide

Summary

Explore high-performance power switching with this N-channel MOSFET. Featuring low on-resistance and a built-in Gate-Source Protection Diode, it is optimized for compact surface mount applications across various switching circuits. This comprehensive technical manual provides detailed electrical characteristics, absolute maximum ratings, thermal impedance data, and dynamic switching performance curves essential for engineers and circuit designers selecting reliable power semiconductor components.

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Data Sheet

4V Drive Nch MOSFET RXH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8). (1) (4)

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TB Basic ordering unit (pieces) RXH100N03

(1) Source ∗2 (2) Source (3) Source

(4) Gate ∗1

Absolute maximum ratings (Ta = 25C) (5) Drain (6) Drain

Parameter Symbol Limits Unit (7) Drain (1) (2) (3) (4)

(8) Drain

Drain-source voltage VDSS ∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Gate-source voltage VGSS 20

Continuous ID 10

Drain current

Pulsed IDP *1 36

Source current Continuous IS 1.6

(Body Diode) Pulsed ISP *1

Power dissipation PD *2 2.0

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) 62.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RXH100N03 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RXH100N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Packa...

Page 2 Data Sheet RXH100N03 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RXH100N03 Electrical characteristic curves (Ta=25C) IC IN -S -S IN [A IN [A Fig.2 Typical Output Characteristics(Ⅱ) Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Ta=25°C Pulsed Pulsed V...

Page 4 Data Sheet RXH100N03 IT IN IM IC IN -S -S IS Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VDS= 10V VGS= 4.0V Pulsed Pulsed Ta=...

Page 5 Data Sheet RXH100N03 IZ IE IS t) Fig.13 Typical Capacitance Fig.14 Maximum Safe Operating Aera vs. Drain-Source Voltage Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=1ms PW = 10ms...

Page 6 Data Sheet RXH100N03 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.10 MB
Published	June 06, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage (V(DSS)) rating?

The absolute maximum limit for drain-to-source voltage V is 30 V.

Can this device operate reliably at high temperatures?

Yes, the storage temperature range (Tstg) is -55 °C to +150 °C.

What precautions must be taken regarding power dissipation during use?

The maximum duty cycle for power dissipation (Pw) is 1%, with a pulse width limit of 10μs.

Does the MOSFET include built-in protection features?

Yes, it includes a Built-in G-S Protection Diode.