ROHM RW1E015RP User Guide

Summary

A powerful P-channel MOSFET designed for low on-resistance and high power density, featuring a reliable 4V drive capability. This comprehensive datasheet provides engineers with detailed operational guidance, including absolute maximum ratings, dynamic switching characteristics, static electrical parameters, and performance curves. Ideal for integrating into general-use electronic equipment such as audio/visual systems, automation devices, and communication modules where efficiency and compact design are critical.

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4V Drive Pch MOSFET RW1E015RP Structure Dimensions (Unit : mm)

WEMT6

Silicon P-channel MOSFET

Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V)

Applications Abbreviated symbol : UJ Switching Inner circuit

Packaging specifications

Package Taping ∗2

Type Code T2R

Basic ordering unit (pieces) ∗1

RW1E015RP

(1) Drain (2) Drain (3) Gate

(4) Source (5) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −30 VVDSS Gate-source voltage ±20 VVGSS Continuous ±1.5 AID

Drain current

Pulsed ∗1 ±6 AIDP

Source current Continuous −0.5 AIS (Body diode) ∗1 Pulsed −6 AISP Total power dissipation ∗2 0.7 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 179∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board.

1/4 www.rohm.com 2009.06 - Rev.A

Page Summary Contents For ROHM RW1E015RP User Guide

Page 1 4V Drive Pch MOSFET RW1E015RP Structure Dimensions (Unit : mm) WEMT6 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V) Application...

Page 2 Data Sheet RW1E015RP Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −30 ...

Page 3 Data Sheet RW1E015RP ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m ES IS TA : R on )[m AI EN : - [A Electrical characteristics curves VDS= -10V VGS= -10V Pulsed VGS= -10V VGS=...

Page 4 Data Sheet RW1E015RP ST AT IC AI -S -S TA TE AP AC IT AN : C [p F] ES IS TA : R S( )[m Ta=25°C Ta=25°C Pulsed VDD= -15V td(off) VGS= -10V ID= -1.5A RG=10Ω Pulsedtf td(on) Ta=25°C VDD= -15V ID= -1.5A I...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	222.00 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the maximum rated drain-source voltage?

The absolute maximum rating for Drain-source voltage ($V_{DSS}$) is -30 V.

How efficiently does this MOSFET operate when closed?

The static drain-source on-state resistance (Rds(on)) ranges from -170 to 240 mΩ.

What are the key features of the RW1E015RP MOSFET?

It features low on-resistance, a space saving high power package, and is suitable for 4V low voltage drive applications.

Is this product designed for critical life support equipment?

No, it shall not be used in systems requiring an extremely high level of reliability, such as medical instruments or aerospace machinery.