ROHM RW1A020ZP User Guide

Summary

This component is a Silicon P-channel MOSFET, optimized for low on-resistance and high power switching applications across general electronic equipment, including AV systems and office automation devices. This manual provides comprehensive technical documentation, detailing absolute maximum ratings, full electrical characteristics, body diode properties, and detailed performance graphs (including turn-on/turn-off delays) necessary for robust circuit design verification. It is designed for engineers integrating reliable power switching into commercial electronic applications.

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Page 1 Text Content

1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit : mm)

WEMT6

Silicon P-channel MOSFET

Features 1) Low on-resistance.

2) High power package. (1) (2) (3)

3) Low voltage drive. (1.5V)

Abbreviated symbol : ZE

Applications Inner circuit Switching (6) (5) (4)

Packaging specifications

Package Taping

Type Code T2R

Basic ordering unit (pieces) (1) Drain (2) Drain

RW1A020ZP (3) Gate

(4) Source (5) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±2 AID

Drain current

Pulsed ∗1 ±6 AIDP

Source current Continuous −0.5 AIS (Body diode) ∗1 Pulsed −6 AISP Total power dissipation ∗2 0.7 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 179∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board.

Page Summary Contents For ROHM RW1A020ZP User Guide

Page 1 1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit : mm) WEMT6 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. (1) (2) (3) 3) Low voltage drive. (1.5V) Abbreviat...

Page 2 RW1A020ZP Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 RW1A020ZP Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m ES IS TA : R on )[m AI EN : - [A Electrical characteristics curves Ta=25°C Ta=25°C VDS= -6V 3.5 Pulsed-10V 3.5 ...

Page 4 RW1A020ZP Data Sheet Ta=25°C AT E- SO VO LT AG : - V] EV ER SE AI EN : - Is [A VGS=0V Ta=25°C VDD= -6V S [ Pulsed Pulsed td(off) VGS=-4.5V RG=10Ω Pulsed tf ID= -1A ID= -2A Ta=125°C 0.1 Ta=75°C Ta=25°C...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	224.41 KB
Published	June 04, 2026

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Frequently Asked Questions

What is the recommended operating temperature range for this MOSFET?

The Channel temperature ($T_{ch}$) has a maximum rating of 150°C, and the storage temperature range ($T_{stg}$) is -55 to +150°C.

Can this product be used in life-critical applications like aerospace or medical devices?

No. It is not designed for equipment requiring extremely high reliability, such as medical instruments, transportation equipment, or nuclear controllers.

What are the electrical advantages of this MOSFET package?

It features low on-resistance, a high power package, and supports a low voltage drive (1.5V).

Are there specific precautions regarding usage safety?

Users must implement safety measures like derating or redundancy to guard against physical injury or fire in case of product failure.