ROHM RUF015N02 User Guide

Summary

Provides comprehensive technical specifications for the RUF015N02 Silicon N-channel MOSFET transistor, a space-saving component optimized for low on-resistance and 1.8V drive applications. This documentation is essential for electrical engineers and product designers building reliable electronic systems. It details critical performance graphs, including switching characteristics, leakage current limits, thermal resistance, and static drain-source curves, ensuring accurate implementation in circuits ranging from consumer electronics to industrial control equipment.

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RUF015N02

Transistors

1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TUMT3

Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.8V drive).

(1) Gate (2) Source Abbreviated symbol : PS

Applications

(3) Drain

Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL

Basic ordering unit (pieces)

RUF015N02

0. 2M ax

(1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.5 AID

Drain current

Pulsed ±3.0 AIDP Source current Continuous 0.6 AIS

(Body diode) ∗1

Pulsed 2.4 AISP

Total power dissipation 0.8 WPD Channel temperature °CTch Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Mounted on a ceramic board

Page Summary Contents For ROHM RUF015N02 User Guide

Page 1 RUF015N02 Transistors 1.8V Drive Nch MOSFET RUF015N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3...

Page 2 RUF015N02 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=10V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= 1m A...

Page 3 IC IN -S RUF015N02 IN ID IT p F -S IS on ) ( Transistors Electrical characteristics curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=10V VDD=10V VGS=0V VGS=4.5V ID=1.5A RG=10Ω RG=10Ω Pulsed Pulsed td(off) td...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	111.16 KB
Published	July 22, 2026

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Frequently Asked Questions

Is ESD protection necessary when using this MOSFET?

Yes, the datasheet warns that the product might cause chip aging under an electrified environment, making it recommended to design an ESD protection circuit.

What is the maximum continuous drain current (ID) I can handle?

The maximum specified continuous Drain current (ID) limit for RUF015N02 is ±1.5 A.

What board type should be used when calculating thermal resistance?

The listed thermal resistance values specify that the component must be mounted on a ceramic board.

Can I use this MOSFET in high-reliability systems (e.g., medical equipment)?

If using it with life-safety devices, you must consult a sales representative and account for failure by integrating derating and fail-safe measures.