ROHM RT1E050RP User Guide

Summary

This comprehensive manual details the RT1E050RP, a high-performance 4V drive P-channel MOSFET designed for various switching applications in general electronic equipment. It provides crucial data on low on-resistance, powerful thermal capability, and advanced electrical parameters, including detailed switching times, gate charges, and absolute maximum ratings under different operating conditions. Ideal for electronics designers and engineers selecting robust semiconductor components for reliability in complex circuit designs.

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4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8

Features 1) Low on-resistance.

2) High power package. (1) (2) (3) (4)

3) 4V drive.

Abbreviated symbol :UD

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (5)(6)(7)

Type Code TR

Basic ordering unit (pieces)

(1) Drain

RT1E050RP (2) Drain

(3) Drain (4) Gate (5) Source (6) Drain

Absolute maximum ratings (Ta = 25C) (7) Drain (1) (4)(3)(2)

(8) Drain ∗1 ESD PROTECTION DIODE

Parameter Symbol Limits Unit

∗2 BODY DIODE

Drain-source voltage VDSS 30 Gate-source voltage VGSS 20

Continuous ID 5

Drain current

Pulsed IDP *1 20

Source current Continuous IS 1

(Body Diode) Pulsed ISP *1 20 Power dissipation PD *2 1.25

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RT1E050RP User Guide

Page 1 4V Drive Pch MOSFET RT1E050RP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 Features 1) Low on-resistance. 2) High power package. (1) (2) (3) (4) 3) 4V drive. Abbreviated symbol :...

Page 2 RT1E050RP Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 3...

Page 3 RT1E050RP Data Sheet IC IN -S -S IC IN -S -S Electrical characteristics curves IS (o IS (o IN -I [A VGS= -3.0V VDS= -10V Ta=25°C VGS= -3.0V Ta=25°C Pulsed Pulsed Pulsed VGS= -2.8V Ta= 125°C Ta= 75°C ...

Page 4 RT1E050RP Data Sheet IC IN -S -S IS (O Ta=25°C Ta=25°C Pulsed VDD= -15V VGS= -10V RG=10Ω ID= -2.5A td(off) Pulsed ID= -5.0A Ta=25°C td(on) VDD= -15V ID= -5.0A tr RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -V...

Page 5 RT1E050RP Data Sheet Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID IG(Const.) Qgs Qgd C...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	311.37 KB
Published	June 18, 2026

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Frequently Asked Questions

What is the recommended mounting requirement for this MOSFET?

The component is mounted on a ceramic board when calculating thermal resistance.

Does this device support radiation-tolerant applications?

No, the technology specified in this document is not designed to be radiation tolerant.

What is the typical static drain-source on-state resistance (Rds(on))?

The Rds(on) ranges from a minimum of 36 mOhms and a maximum of 50 mOhms.

Is this product suitable for life support or critical safety systems?

No, it is not designed for equipment requiring extremely high levels of reliability, such as medical instruments or aerospace machinery.