ROHM RSU002P03 User Guide

Summary

This datasheet details the RSU002P03 Silicon P-channel MOSFET, an optimal switching component designed for applications requiring low on-resistance and 4V drive capabilities. This manual provides comprehensive electrical characteristics—including static readings, dynamic switching times, and body diode performance. It is essential technical documentation for electronics engineers, circuit designers, and technicians who require reliable and high-performance power transistors for robust electronic system development.

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RSU002P03

Transistors

4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

Features

1) Low On-resistance 2) 4V drive

Applications (1) Source Each lead has same dimensions (2) Gate

Switching Abbreviated symbol : WP

(3) Drain

Packaging specifications Inner circuit

Package Taping (3)

Type Code T106

Basic ordering unit (pieces)

RSU002P03 1. 2.

0. 1M in

(1) (1) Source (2) Gate

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit Drain-source voltage −30 VVDSS Gate-source voltage ±20 VVGSS Continuous ±0.25 AID

Drain current

Pulsed ±0.5 AIDP

Total power dissipation 0.2 WPD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Each terminal mounted on a recommended land

Rev.A 1/4

Page Summary Contents For ROHM RSU002P03 User Guide

Page 1 RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET Features 1) Low On-resistance 2) 4V drive Applications (1) Source Each lead has same dimen...

Page 2 RSU002P03 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −30...

Page 3 IC IN -S RSU002P03 IT p F IN −I -S IS on ) ( Transistors Electrical characteristics curves Ta=25°C f=1MHz Ta=25°C Ta=25°C VGS=0V VDD= −15V VDD= −15V VGS= −10V ID= −250m A RG=10Ω RG=10Ω Pulsedtf Pulsed...

Page 4 RSU002P03 IC IN -S -S IS on ) ( Transistors Ta=25°C Pulsed VGS= −4.0V −4.5V −10V DRAIN CURRENT : −ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) Rev.A 4/4

Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	5
File Size	63.18 KB
Published	July 15, 2026

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Frequently Asked Questions

What is the maximum total power dissipation (PD)?

The maximum rated total power dissipation for this component is 0.2 W.

Can I use this transistor in life-critical applications like medical devices?

No; if your equipment requires extremely high reliability, you must consult a sales representative first.

What are the typical ranges for the drain current and resistance on-state performance?

Static on-state resistance (RDS(on)) typically ranges from 1.4 Ω to 2.4 Ω during operation.

Does proper circuit design affect thermal performance?

Yes, mounting each terminal on a recommended land is necessary for accurate thermal dissipation according to the manual.