ROHM RSQ020N03 User Guide

Summary

This N-channel MOSFET is a low on-resistance, space-saving component packaged in TSMT6 for efficient power switching applications. The comprehensive technical manual details its high performance, covering electrical characteristics, absolute maximum ratings, thermal resistance, and detailed curves for critical parameters like turn-on/off timing and capacitance. It is designed for electronics engineers and designers requiring reliable and compact components for demanding switching circuit integratons.

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RSQ020N03

Transistors

4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TSMT6

1.0MAX

Features 0.950.95 0.7

1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6).

1pin mark

Applications

Each lead has same dimensions

Switching

Abbreviated symbol : QQ

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

RSQ020N03

(1) Drain (2) Drain (3) Gate

(4) Source ∗1 ESD PROTECTION DIODE (5) Drain ∗2 BODY DIODE (6) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±2.0 AID

Drain current

Pulsed ±8.0 AIDP Source current Continuous 1.0 AIS

(Body diode) ∗1

Pulsed 8.0 AISP

Total power dissipation 1.25 WPD Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Mounted on a ceramic board

Rev.A 1/4

Page Summary Contents For ROHM RSQ020N03 User Guide

Page 1 RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX Features 0.950.95 0.7 1) Low On-resistance. 2) Space saving, small surface mo...

Page 2 RSQ020N03 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= 1m A...

Page 3 IC IN -S RSQ020N03 IT p F -S IS −R on ) ( IN ID Transistors Electrical characteristics curves Ta=25°C f=1MHz Ta=25°C Ta=25°C VGS=0V VDD= 15V VDD= 15V VGS= 4.5V ID= 2.0A RG=10Ω RG=10Ω Pulsed Pulsed td ...

Page 4 RSQ020N03 IC IN -S -S IS on ) ( Transistors Ta=25°C Pulsed VGS= 4.0V 4.5V 10V DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( Ι ) Rev.A 4/4

Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	5
File Size	65.75 KB
Published	June 02, 2026

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Frequently Asked Questions

What is the drain current range for the RSQ020N03 MOSFET?

The continuous Drain Current (ID) is ±2.0 A, and the pulsed rating (IDP) is ±8.0 A.

How does the device handle heat dissipation?

Maximum total power dissipation (PD) is 1.25 W, and thermal resistance Rth(ch-a) is 1.6 to 2.8 °C/W when mounted on a ceramic board.

What are the operating voltage limits for this transistor?

The Drain-source voltage (DSS) limit is 30 V, and the continuous Gate-source voltage (VGSS) limit is 20 V.

Does the datasheet provide switching characteristics data?

Yes, it provides figures for typical capacitance, switching characteristics, and dynamic input characteristics over various frequencies.