ROHM RSJ650N10 User Guide

Summary

This datasheet provides comprehensive technical specifications for the RSJ650N10 N-channel MOSFET. Featuring low on-resistance and a versatile 4V drive capability, this power semiconductor is designed for efficient switching applications in demanding circuits. The documentation covers all critical operating parameters, including absolute maximum ratings, detailed electrical characteristics, thermal behavior (SOA), and complex dynamic electrical curves necessary for circuit design implementation. This resource is essential for power electronics engineers selecting reliable components for high-power system designs.

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Data Sheet

4V Drive Nch MOSFET RSJ650N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) Low on-resistance. 1.24 2) High power package.

3) 4V drive. 0.782.54

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TL Basic ordering unit (pieces)

∗2 .1 3. 9. RSJ650N10 1.

(1) Gate (2) Drain ∗1 ESD PROTECTION DIODE (3) Source ∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C) 1.

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID *3 65

Drain current

Pulsed IDP *1 130

Source current Continuous IS *3

(Body Diode) Pulsed ISP *1 Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 1.25 C / W * TC=25°C

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Page Summary Contents For ROHM RSJ650N10 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RSJ650N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 1.24 2) High power package. 3) 4V drive. 0.782.54 Application Swit...

Page 2 Data Sheet RSJ650N10 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSJ650N10 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Outpu...

Page 4 Data Sheet RSJ650N10 te -S rc lt ta ti ra in -S rc -S ta te is ta ra in rr Fig.7 Typical Transfer Characteristics Fig.8 Source Current vs. Source-Drain Voltage VDS=10V VGS=0V pulsed pulsed Ta=125°C Ta...

Page 5 Data Sheet RSJ650N10 rm li ra ie rm is ta t) Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width Fig.14 Maximum Safe Operating Area Ta=25°C Operation in this area is limited by RDS(on) Sin...

Page 6 Data Sheet RSJ650N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.10 MB
Published	June 17, 2026

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