ROHM RSJ300N10 User Guide

Summary

This advanced N-channel MOSFET is engineered for dependable power switching applications requiring ultra-low on-resistance and integrated G-S protection. The comprehensive manual provides technical details covering all critical parameters, including dynamic electrical characteristics, detailed switching time analysis, thermal resistance measurements under pulsed loads, and the maximum safe operating area. It is essential reading for power electronics engineers and designers who require a highly robust, high-efficiency semiconductor solution adaptable to diverse operational temperature ranges.

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Data Sheet

4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS

Features

1) Low on-resistance. 1.24

2) Built-in G-S Protection Diode.

Application Switching

Packaging specifications Inner circuit

Package Taping ∗1

Type Code TL Basic ordering unit (pieces)

RSJ300N10

Absolute maximum ratings (Ta = 25C)

(1) Gate (1) (2) (3) (2) Drain

Parameter Symbol Limits Unit ∗1 ESD PROTECTION DIODE

(3) Source

∗2 BODY DIODE

Drain-source voltage VDSS

Gate-source voltage VGSS 20 Continuous ID *1 30

Drain current

Pulsed IDP *2 60 Continuous IS *1

Source current

(Body Diode) Pulsed ISP *2 Power dissipation PD *3

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Limited only by maximum temperature allowed. *2 Pw≦10s, Duty cycle≦1% *3 Tc=25℃

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RSJ300N10 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RSJ300N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS Features 1) Low on-resistance. 1.24 2) Built-in G-S Protection Diode. Application Switching ...

Page 2 Data Sheet RSJ300N10 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSJ300N10 Electrical characteristic curves (Ta=25C) IC IN -S -S IN [A IN [A IS Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C VGS= 10V Ta=25°C VGS...

Page 4 Data Sheet RSJ300N10 IC IN -S -S IT IN IM Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= 4.0V VDS= 10V Pulsed Pulsed Ta=125...

Page 5 Data Sheet RSJ300N10 IZ IE IT IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS=10V) PW=100us PW=1ms PW = 1...

Page 6 Data Sheet RSJ300N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Wavefor...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.14 MB
Published	June 05, 2026

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Frequently Asked Questions

What is the maximum continuous drain current (D)?

The maximum continuous drain current (D) is limited to 30 A.

What thermal parameters should be considered when operating the device?

The thermal resistance from case to ambient (Rth(c-a)) is listed at 2.5 °C/W, and the channel temperature range (Tch) is 150 °C.

Can this MOSFET handle high voltages?

Yes, it has a maximum drain-source voltage (Vdss) rating of 100 V.

What are the typical on-resistance values?

The static drain-source on-state resistance (Rds(on)) is typically between 36 and 58 mΩ at I=15A and V=4.5V.