ROHM RSF014N03 User Guide

Summary

Silicon N-channel power MOSFET in a compact TUMT3 surface mount package designed for 4V gate drive applications. Features low on-resistance of 170mO (typical) at 10V gate-source, supporting continuous drain current up to 1.4A and pulsed current up to 5.6A. The device includes built-in ESD protection and body diode, with a drain-source voltage rating of 30V. Suitable for switching applications in space-constrained portable electronics, battery-powered devices, and low-voltage DC-DC converter circuits where efficient power management is required.

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RSF014N03

Transistors

4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TUMT3

Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive.

(1) Gate (2) Source Abbreviated symbol : PN

Applications (3) Drain Switching

Packaging specifications Inner circuit

Package Taping

Type Code TL

Basic ordering unit (pieces)

RSF014N03 (1) ∗2 ∗1

0. 2M ax

(1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.4 AID

Drain current

Pulsed ±5.6 AIDP Source current Continuous 0.6 AIS

(Body diode) ∗1

Pulsed 5.6 AISP

Total power dissipation 0.8 WPD Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient °C/WRth(ch-a)

∗ Mounted on a ceramic board

Rev.B 1/4

Page Summary Contents For ROHM RSF014N03 User Guide

Page 1 RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3)....

Page 2 RSF014N03 Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID= 1m A...

Page 3 IC IN RSF014N03 IT p F -S IS on Transistors IN ID Electrical characteristics curves Ta=25°C f=1MHz Ta=25°C Ta=25°C VGS=0V VDD=15V VDD=15V VGS=10V ID=1.4A RG=10Ω RG=10Ω Pulsed Pulsed td (off) Coss Crss...

Page 4 RSF014N03 IC IN -S IS on Transistors Ta=25°C Pulsed VGS=4V VGS=4.5V VGS=10V DRAIN CURRENT : ID (A) Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) Rev.B 4/4

Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	5
File Size	77.70 KB
Published	June 16, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage for the RSF014N03?

The maximum drain-source voltage (VDSS) is 30V.

What is the typical on-resistance at 4V gate drive?

The typical static drain-source on-state resistance (RDS(on)) at VGS=4V and ID=1.4A is 270 mΩ.

Is there an ESD protection diode integrated in this MOSFET?

Yes, the device includes an integrated ESD protection diode, as shown in the inner circuit diagram.