ROHM RSD175N10 User Guide

Summary

This technical datasheet provides comprehensive specifications for the RSD175N10 N-channel MOSFET, an ideal component for high-power switching applications requiring low on-resistance and robust performance. The manual covers critical information including absolute maximum ratings, detailed electrical characteristics, thermal resistance curves, and precise measurement circuits. It is essential reading for power electronics engineers and circuit designers who need to thoroughly select or integrate this device into systems like motor controllers or DC/DC converters while ensuring reliable operation across varying loads and temperatures.

📄 Preview ‹ PAGE OF 7 ›

‹

›

Page 1 Text Content

Data Sheet

4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 4) 4V drive.

4) High power package.

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TL Basic ordering unit (pieces)

RSD175N10

(1) Gate (2) Drain ∗1 ESD PROTECTION DIODE

(3) Source ∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

0. 8M in

Parameter Symbol Limits Unit 2.

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID *3 17.5

Drain current

Pulsed IDP *1 35

Source current Continuous IS *3 17.5

(Body Diode) Pulsed ISP *1 Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C

Page Summary Contents For ROHM RSD175N10 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 4) High power pac...

Page 2 Data Sheet RSD175N10 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSD175N10 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Ou...

Page 4 Data Sheet RSD175N10 rc rr rw rd ra fe it ta it in im Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=125°C...

Page 5 Data Sheet RSD175N10 ra in rr Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Ta=25°C f=1MHz Single Pulse VGS=0V Mounted on ...

Page 6 Data Sheet RSD175N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Wavefor...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.13 MB
Published	June 05, 2026

26 views

Enter the captcha to get the download link: