ROHM RSD100N10 User Guide

Summary

This comprehensive datasheet introduces the RSD100N10 N-channel MOSFET, an ideal component engineered for high-power and efficiency demands. Featuring low on-resistance and optimized 4V drive capabilities, this device excels in demanding switching applications, ensuring reliable circuit performance. The manual provides power electronics engineers with exhaustive details, including absolute maximum ratings, detailed electrical curves (switching time, thermal resistance), and operational guidelines required for precise component selection and design validation.

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Data Sheet

4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) 4V drive.

3) High power package. 0.65

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TL Basic ordering unit (pieces)

RSD100N10

(1) Gate (2) Drain

1 ESD PROTECTION DIODE

(3) Source 0.

2 BODY DIODE

0. 8M in.

Absolute maximum ratings (Ta = 25C) 2.

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID *3 10

Drain current

Pulsed IDP *1 20 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C

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Page Summary Contents For ROHM RSD100N10 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RSD100N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 3) High power pac...

Page 2 Data Sheet RSD100N10 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSD100N10 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta (o [m (o [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 T...

Page 4 Data Sheet RSD100N10 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=125°C Ta=75°C...

Page 5 Data Sheet RSD100N10 ra in rr Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Ta=25°C f=1MHz Single Pulse VGS=0V Ciss 0.1 Mo...

Page 6 Data Sheet RSD100N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.13 MB
Published	June 22, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage (VDSS)?

The absolute maximum rating for VDS is 100V.

How much power can this MOSFET dissipate?

The maximum continuous power dissipation (PD) is rated at 20W.

Are there limits on operating the device?

Yes, operation must stay within the area shown in the Maximum Safe Operating Area (Fig.15).

What are the gate voltage parameters for operation?

The drain-source voltage Vd is rated up to 100V, and the gate-source voltage Vgs is $\pm20$V.