ROHM RSD080N06 User Guide

Summary

The RSD080N06 is a high-performance Silicon N-channel MOSFET designed for robust switching applications requiring low on-resistance and efficient 4V drive capabilities. This manual provides complete professional documentation, detailing absolute maximum ratings, detailed electrical characteristics, thermal parameters, and comprehensive performance curves (including $R_{DS(on)}$ and switching times). It is essential inventory for power electronics designers building circuit systems that demand high reliability and precise control over dynamic load management.

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Page 1 Text Content

Data Sheet

4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) 4V drive.

3) High power package(CPT3).

Application Switching

Packaging specifications Inner circuit

Package Taping ∗1

Type Code TL Basic ordering unit (pieces)

RSD080N06

(1) Gate (1) (2) (3)

(2) Drain

1 ESD PROTECTION DIODE

(3) Source

2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

0. 8M in

Parameter Symbol Limits Unit 2.

Drain-source voltage VDSS Gate-source voltage VGSS 20

Continuous ID 8

Drain current

Pulsed IDP *1 16

Source current Continuous IS

(Body Diode) Pulsed ISP *1

Power dissipation PD *2

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 TC=25C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 8.33 C / W * TC=25C

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Page Summary Contents For ROHM RSD080N06 User Guide

Page 1 Data Sheet 4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 2) 4V drive. 3) High power pac...

Page 2 Data Sheet RSD080N06 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID...

Page 3 Data Sheet RSD080N06 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta (o [m (o [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 T...

Page 4 Data Sheet RSD080N06 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=25°C ...

Page 5 Data Sheet RSD080N06 rm li ra ie rm is ta r（ t） it Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area Ta=25°C is limited by RDS(on) f=1MHz (V...

Page 6 Data Sheet RSD080N06 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.13 MB
Published	July 07, 2026

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