ROHM RSD050N10 User Guide

Summary

This datasheet from ROHM Semiconductor covers the RSD050N10 silicon N-channel MOSFET designed for 4 V gate drive operation in switching applications, housed in the CPT3 (SC-63/SOT-428) surface-mount package. The device is rated for 100 V drain-source voltage with 5 A continuous and 20 A pulsed drain current capability, and features low on-resistance of 135 milliohms typical at 10 V gate drive decreasing to 145 milliohms at 4 V drive. Key specifications include gate threshold voltage from 1.0 V t

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4V Drive Nch MOSFET RSD050N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple.

3) Parallel use is easy.

Applications Switching

Packaging specifications Inner circuit

Package CPT3

Type Code TL Basic ordering unit (pieces)

(1) Gate (2) Drain (3) Source

Absolute maximum ratings (Ta=25°C) *1 ESD Protection Diode

*2 Body Diode

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS 20

Continuous ID 5.0

0. 8M in

Drain current 2. 1.

Pulsed IDP 20

Source current Continuous IS 5.0

(Body Diode) *1

Pulsed ISP

Power dissipation PD *2

Channel temperature Tch °C

Range of storage temperature Tstg 55 to +150 °C

*1 Pw≦10s, Duty cycle≦1%

*2 Tc=25°C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 8.33 °C / W * Tc=25C

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Page Summary Contents For ROHM RSD050N10 User Guide

Page 1 4V Drive Nch MOSFET RSD050N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can...

Page 2 Data Sheet RSD050N10 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 A VGS=±20V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=1...

Page 3 Data Sheet RSD050N10 Electrical characteristic curves (Ta=25C) ta tic ra in -S rc -S ta te si st ce ta tic ra in -S rc -S ta te si st ce (o n) [m [m ra in rr t : [A Fig.1 Typical Output Characterist...

Page 4 Data Sheet RSD050N10 itc in im [n s] rc rr t : [A rw rd ra sf itt ce fs [S Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=1...

Page 5 Data Sheet RSD050N10 rm liz ra si rm si st ce r（ t） ci ta ce Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area Ta=25°C is limited by RDS(on)...

Page 6 Data Sheet RSD050N10 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching wavefor...

Page 7 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	7
File Size	506.46 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the device's minimum static drain-source on-state resistance?

The minimum R_DS(on) is 142 mΩ when measured at 5.0A and 4.5V.

Can I use this MOSFET for equipment requiring extremely high reliability?

No. It should not be used in systems like medical instruments, transportation equipment, or nuclear-reactor controllers.

What are the maximum specified power dissipation and temperature ranges?

The continuous power dissipation (P_D) is 15W, and the channel temperature range is -55 to +150°C.