ROHM RQ1A070ZP User Guide

Summary

This datasheet details the RQ1A070ZP, a robust P-channel MOSFET featuring low on-resistance and optimized 1.5V drive capability for high-power switching applications. It provides comprehensive engineering data, including electrical characteristics, absolute maximum ratings, thermal resistance figures, and performance curves necessary for reliable circuit design. This component is ideal for engineers developing general electronic equipment such as audio visual devices and office automation systems.

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1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET

TSMT8

Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package.

Applications Abbreviated symbol : YJ Each lead has same dimensions Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TR

Basic ordering unit (pieces)

RQ1A070ZP

(1) Source

(2) Source (3) Source

Absolute maximum ratings (Ta=25°C)

(4) Gate (5) Drain

<It is the same ratings for Tr1 and Tr2.> (1) (2) (3) (4)

(6) Drain Parameter Symbol Limits Unit (7) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (8) Drain

Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±7 AID

Drain current

Pulsed ±28 AIDP Source current Continuous −1 AIS

(Body diode) ∗1

Pulsed −28 AISP

Total power dissipation 1.5 WPD

Channel temperature °CTch

Range of Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient 83.3∗ °C/WRth(ch-a)

∗ Mounted on a ceramic board.

1/4 www.rohm.com 2009.08 - Rev.A

Page Summary Contents For ROHM RQ1A070ZP User Guide

Page 1 1.5V Drive Pch MOSFET RQ1A070ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low On-resistance. 2) Low voltage drive. (1.5 V) 3) High power package. Applications Abbrevi...

Page 2 Data Sheet RQ1A070ZP Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(BR) DSS −12 ...

Page 3 Data Sheet RQ1A070ZP Electrical characteristics curves ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m ES IS TA : R S( on )[m Ta=25℃ Ta=25℃ VDS= -6V VGS= -4.5V AI EN : - [A Puls...

Page 4 Data Sheet RQ1A070ZP AT E- SO VO LT AG : - V] EV ER SE AI EN : - Is [A Ta=25°C S [ Ta=25℃ Pulsed VDD= -6V Ta=125°C VGS= -4.5V td(off) Ta=75°C tf RG=10Ω Ta=25°C Pulsed Ta=-25°C ID= -7.0A ID= -3.5A 0.1 ...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	228.33 KB
Published	June 04, 2026

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