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ROHM RHP020N06 User Guide

Summary

This N-channel Power MOSFET is designed for demanding high-speed switching applications, delivering low on-resistance and a wide Safe Operating Area (SOA). The accompanying manual serves as a technical deep dive, detailing crucial operational parameters such as absolute maximum ratings, transient electrical characteristics, thermal performance curves, and package specifications. This document is ideal for power electronics engineers integrating robust and efficient solid-state switching components into electronic appliances and industrial control systems.

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Page 1 Text Content

4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3

Features 1) Low On-resistance.

2) High speed switching.

3) Wide SOA. 0.5

(1)Gate 3.0

(2)Drain Applications (3)Source Abbreviated symbol : LR

Switching

Packaging specifications and h FE Inner circuit

Package Taping DRAIN

Type Code T100

Basic ordering unit (pieces)

RHP020N06

GATE ∗2

∗1 SOURCE

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Drain-source voltage VVDSS

Gate-source voltage ±20 VVGSS Continuous ±2 AID

Drain current

Pulsed ±8 AIDP

Continuous AIS

Source current

Pulsed AISP m W

Total power dissipation PD

Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 40 40 0.7mm ceramic board+

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth(ch-a)

∗ When mounted on a 40 40 0.7mm ceramic board+

www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.03 - Rev.A 1/4

Page Summary Contents For ROHM RHP020N06 User Guide

Page 1 4V Drive Nch MOSFET RHP020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET MPT3 Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. 0.5 (1)Gate 3.0 (2)Drain Applications ...
Page 2 RHP020N06 Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±20V, VDS=0V Drain-source breakdown voltage V(BR) DSS ID=...
Page 3 RHP020N06 Data Sheet TA TI IN -S -S TA TE Electrical characteristics curves TA TI IN -S -S TA TE IS TA S( on )[Ω IS TA S( on )[Ω IN : I [A Ta=25°C Ta=25°C VDS= 10V VGS= 10V Pulsed Pulsed Pulsed VGS= 5...
Page 4 RHP020N06 Data Sheet TA TI IN -S -S TA TE IZ IE TH IT [p F] IS TA S( )[Ω IS TA r ( t) Ta=25°C Ta=25°C td(off) VDD= 30V 0.5 tf Pulsed VGS=10V RG=10Ω 0.4 ID= 2.0A Pulsed Ta=25°C 0.2 VDD= 30V ID= 2.0A 0....
Page 5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement wit...

Manual Details

Brand ROHM
Pages 5
File Size 221.76 KB
Published June 17, 2026
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Frequently Asked Questions

What is the max drain-source voltage?

The maximum drain-source voltage is 60 V.

What is the on-resistance at VGS=10V?

The typical on-resistance is 150 mΩ at VGS=10V, ID=2A.

Can this MOSFET be used in medical devices?

No, it is not designed for use in medical instruments or other high-reliability safety-critical systems.

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