ROHM RCX330N25 User Guide

Summary

The RCX330N25 is a high-performance N-channel MOSFET designed for robust switching applications in demanding power electronics circuits. Engineered with low on-resistance and fast switching speed, it offers efficient power handling up to 40W in the TO-220 package. This detailed datasheet provides comprehensive technical specifications, including electrical characteristics, thermal performance curves, gate charge analysis, and absolute maximum ratings. It is essential for engineers designing reliable circuits that require accurate management of transient current and optimal switching efficiency.

📄 Preview ‹ PAGE OF 7 ›

‹

›

Page 1 Text Content

Data Sheet

10V Drive Nch MOSFET RCX330N25 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Low on-resistance. 1.2

2) Fast switching speed.

3) Gate-source voltage 0.8 2.54 0.75 2.62.54

VGSS garanteed to be ±30V .

4) High package power.

Application Inner circuit Switching

Packaging specifications .0 2. 8.

Package Bulk (1) Gate (1) (3)(2) (2) Drain

Type Code 1 BODY DIODE

(3) Source

Basic ordering unit (pieces)

RCX330N25

Absolute maximum ratings (Ta  25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 33

Drain current

Pulsed IDP *1 132 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche Current IAS *2 16.5 Avalanche Energy EAS *2 74.8 m J

Power dissipation (Tc=25°C) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 3.13 C / W

www.rohm.com

Page Summary Contents For ROHM RCX330N25 User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET RCX330N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Low on-resistance. 1.2 2) Fast switching speed. 3) Gate-source voltage 0.8 2...

Page 2 Data Sheet RCX330N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet RCX330N25 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr ra in rr Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) Ta...

Page 4 Data Sheet RCX330N25 ta ti ra in -S rc -S ta te is ta rw rd ra fe it ta te -S rc lt Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VGS=0V VDS=10V pul...

Page 5 Data Sheet RCX330N25 ra in rr Fig.13 Maximum Safe Operating Area Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width Ta=25°C Ta=25°C Single Pulse Single Pulse Operation in this area is lim...

Page 6 Data Sheet RCX330N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.21 MB
Published	June 18, 2026

1 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is the maximum drain-source voltage (Vds) rating?

The absolute maximum drain-source voltage (Vdss) limit is 250 V.

How is the on-state resistance measured for different temperatures?

Fig.6 shows Static Drain-Source On-State Resistance vs. Channel Temperature, indicating Rds(on) changes with heat.

What are the temperature specifications for storage and operation?

The operating channel temperature range (Tch) is 150°C, while the storage temperature range (Tstg) is -55 to +150°C.

Does the MOSFET have a body diode capability?

Yes, it features a Body Diode, and its typical forward voltage for pulsed operation is 1.5 V.