ROHM RCX120N25 User Guide

Summary

Rohm RCX120N25 250V N-channel power MOSFET datasheet. Features low on-resistance (180mohm), high-speed switching, +/-30V gate-source rating, and 10.5mJ avalanche energy in TO-220FM package. Provides ratings, thermal data, and electrical characteristics. For engineers designing power supplies and motor drives.

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Data Sheet

10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features 1.2

1) Low on-resistance.

2) High speed switching. 0.8 2.54 0.75 2.62.54

3) Gate-source voltage VGSS garanteed to be ±30V

4) High Power Package (TO-220FM).

Application Inner circuit Switching

Packaging specifications

Package Bulk 2. 8.

(1) Gate

Type Code

(2) Drain (3) Souce

Basic ordering unit (pieces) 1 BODY DIODE

RCX120N25

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID *3 12

Drain current

Pulsed IDP *1 48 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche current IAS *2 Avalanche energy EAS *2 10.5 m J

Power dissipation(Tc=25C) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25Tch=25C *3 Limited only by maximum channel temperature allowed.

Thermal resistance Parameter Symbol Limits Unit Channel to Case Rth (ch-c) 3.125 C / W * TC=25C

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Page Summary Contents For ROHM RCX120N25 User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET RCX120N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1.2 1) Low on-resistance. 2) High speed switching. 0.8 2.54 0.75 2.62.54 3) Gat...

Page 2 Data Sheet RCX120N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet RCX120N25 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) Ta...

Page 4 Data Sheet RCX120N25 ta ti ra in -S rc -S ta te is ta te -S rc lt (o rw rd ra fe it ta :Y fs Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V V...

Page 5 Data Sheet RCX120N25 rm li ra ie rm is ta r（ t） rs ry im rr Fig.14 Maximum Safe Operating Area Fig.13 Reverse Recovery Time vs. Source Current Operation in this area is limited by RDS(on) (VGS = 10V) ...

Page 6 Data Sheet RCX120N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.14 MB
Published	June 17, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage of the RCX120N25?

The maximum drain-source voltage VDSS is 250V.

What package does the RCX120N25 MOSFET use?

It uses the TO-220FM high power package.

What is the typical static drain-source on-state resistance?

The typical on-state resistance RDS(on) is 180 mΩ at ID=6A, VGS=10V.

What is the maximum channel temperature for this MOSFET?

The maximum channel temperature Tch is 150°C.