ROHM RCD060N25 User Guide

Summary

The RCD060N25 is a high-performance Silicon N-channel MOSFET engineered for efficient switching power applications. This comprehensive datasheet provides detailed technical specifications covering low on-resistance, high-speed switching capabilities, and operation across extreme temperatures. The manual includes thorough electrical characteristics, absolute maximum ratings, and extensive graphs detailing switching times, gate charge parameters, body diode performance, and thermal coefficients. It is designed for power electronics engineers and designers implementing reliable, robust circuit solutions requiring precise high-frequency switching control.

📄 Preview ‹ PAGE OF 7 ›

‹

›

Page 1 Text Content

Data Sheet

10V Drive Nch MOSFET RCD060N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3

(SC-63)

<SOT-428> 2.3 0.5

Features 1) Low on-resistance. 2) High-speed switching.

3) Wide range of SOA.

2.30.9 4) Drive circuits can be simple. (1) (3) 2.3(2) 0.5

5) Parallel use is easy.

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TL

Basic ordering unit (pieces)

RCD060N25

(1) Gate 0.

(2) Drain

Absolute maximum ratings (Ta = 25C) 5. 1.

(3) Source

1 BODY DIODE

Parameter Symbol Limits Unit

0. 8M in

Drain-source voltage VDSS 1.

Gate-source voltage VGSS 30 9.

Continuous ID *3 6

Drain current

Pulsed IDP *1,3 24

Source current Continuous IS

(Body Diode) Pulsed ISP *1

Avalanche current IAS *2

Avalanche energy EAS *2 2.62 m J

Power dissipation PD *4

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 6.25 C / W * TC=25°C * Limited only by maximum channel temperature allowed.

www.rohm.com

Page Summary Contents For ROHM RCD060N25 User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET RCD060N25 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 3) W...

Page 2 Data Sheet RCD060N25 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ...

Page 3 Data Sheet RCD060N25 Electrical characteristic curves (Ta=25C) ra in rr ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) Ta...

Page 4 Data Sheet RCD060N25 ta ti ra in -S rc -S ta te is ta (o [m rw rd ra fe it ta te -S rc lt Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V VGS=...

Page 5 Data Sheet RCD060N25 rs ry im rr Fig.13 Reverse Recovery Time vs. Source Current Ta=25°C Vgs=0V di/dt=100A/us Pulsed Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6...

Page 6 Data Sheet RCD060N25 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.13 MB
Published	June 20, 2026

3 views

Enter the captcha to get the download link: