ROHM RAQ045P01 User Guide

Summary

Engineered for power switching applications, this P-channel MOSFET offers low on-resistance performance within a compact package and features efficient 1.5V drive capabilities. This comprehensive datasheet is essential reading for electrical engineers and designers implementing high-reliability circuits. It details all absolute maximum ratings, minute electrical characteristics, thermal performance parameters, dynamic switching curves, and measurement setup guides needed to ensure optimal circuit integration and system longevity.

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Data Sheet

1.5V Drive Pch MOSFET RAQ045P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6

Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V)

Abbreviated symbol : SC

Application Switching

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code TCR

Basic ordering unit (pieces) ∗2

RAQ045P01

(1) Drain Absolute maximum ratings (Ta = 25C) (2) Drain (3) Gate

Parameter Symbol Limits Unit (1) (2) (3)

(4) Source (5) Drain

Drain-source voltage VDSS 12 ∗1 ESD PROTECTION DIODE

(6) Drain

∗2 BODY DIODE

Gate-source voltage VGSS 0 to 8 Continuous ID 4.5

Drain current

Pulsed IDP *1 18 Source current Continuous IS 1 (Body Diode) Pulsed ISP *1 18 Power dissipation PD *2 1.25

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RAQ045P01 User Guide

Page 1 Data Sheet 1.5V Drive Pch MOSFET RAQ045P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Ab...

Page 2 Data Sheet RAQ045P01 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0V Drain-source breakdown voltage V(BR)DSS 12...

Page 3 Data Sheet RAQ045P01 Electrical characteristic curves (Ta=25C) IC IN -S -S IN [A IN [A Fig.1 Typical output characteristics(Ⅰ) Fig.2 Typical output characteristics(Ⅱ) Ta=25°C Ta=25°C VGS= -4.5V Puls...

Page 4 Data Sheet RAQ045P01 IT fs IC IN -S -S IC IN -S -S IS IS Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) VGS= -1.8...

Page 5 Data Sheet RAQ045P01 Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C VDD= -6V ID= -4.5A Ta=25°C RG=10W f=1MHz Pulsed VGS=0V DRAIN-SOURCE VOLTAGE : -VDS...

Page 6 Data Sheet RAQ045P01 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VDS Qg IG(Const.) D.U.T. Qg...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.13 MB
Published	June 18, 2026

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Frequently Asked Questions

Is ESD protection necessary when using this MOSFET?

Yes, the manufacturer notes that the product might cause chip aging and breakdown under a large electrified environment, so designing an ESD circuit is recommended.

What is the maximum continuous drain-source voltage rating for RAQ045P01?

The absolute maximum Drain-Source Voltage (Vd) is specified as -12 V.

What is the thermal resistance when mounted on a ceramic board?

The Channel to Ambient thermal resistance (Rth(ch-a)) is limited to 100 °C/W when mounted on a ceramic board.

What is the minimum static Drain-Source ON-state resistance?

The minimum value for the Static drain-source on-resistance (RDS(on)) is listed as -38 mΩ.