ROHM R8008ANX User Guide

Summary

The R8008ANX is a 10V N-channel MOSFET designed for high-voltage switching applications, featuring low on-resistance and high ESD protection. Ideal for power management circuits, this TO-220FM packaged component ensures reliable performance across demanding conditions.

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Data Sheet

10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Low on-resistance. 1.2

2) Low input capacitance.

3) High ESD. (1) Gate 0.8

(2) Drain 2.54 0.75 2.62.54

(3) Source (2) (3)(1)

Application Switching

Packaging specifications Inner circuit

Package Bulk Type Code

Basic ordering unit (pieces)

R8008ANX

(1) Gate

(2) Drain (3) Source

1 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 8

Drain current

Pulsed IDP 32

Continuous IS *3

Source current

(Body Diode) *1

Pulsed ISP

Avalanche current IAS *2 Avalanche energy *2 EAS 4.2 m J *4

Power dissipation PD Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25°C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25°C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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Page Summary Contents For ROHM R8008ANX User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET R8008ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Low on-resistance. 1.2 2) Low input capacitance. 3) High ESD. (1) Gate 0.8 (2...

Page 2 Data Sheet R8008ANX Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet R8008ANX Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ra in rr (o [Ω ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (...

Page 4 Data Sheet R8008ANX ta ti ra in -S rc -S ta te is ta rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V VGS=0V pulsed pulsed Ta...

Page 5 Data Sheet R8008ANX Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms V...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.14 MB
Published	June 15, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage?

800 V.

What package type is the R8008ANX?

TO-220FM, dimensions: 10.0 x 4.5 x 2.8 mm.

What is the gate threshold voltage range?

3.0 V to 5.0 V (at VDS=10V, ID=1mA).

What is the maximum continuous drain current?

±8 A, limited by channel temperature.

What are the key features?

Low on-resistance, low input capacitance, high ESD.