ROHM R6015FNX User Guide

Summary

This datasheet covers the ROHM R6015FNX N-channel power MOSFET in a TO-220FM fully molded package, rated for 600V drain-source voltage and 15A continuous drain current at 25°C. On-resistance is 0.35Ω maximum (0.27Ω typical) at 10V gate drive and 7.5A drain current, with forward transfer admittance of 4.5S minimum. Key dynamic characteristics include 1660pF input capacitance, 1110pF output capacitance, and 45pF reverse transfer capacitance. Gate threshold voltage is 3V to 5V with gate-source volt

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Data Sheet

10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Fast reverse recovery time (trr) 1.2

2) Low on-resistance.

3) Fast switching speed. 0.8 2.54 0.75 2.62.54

4) Gate-source voltage

　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.

Application Switching Inner circuit

Packaging specifications

Package Bulk .0 2. 8.

Type Code

Basic ordering unit (pieces)

(1) Gate

R6015FNX (2) Drain (3) Source

1 BODY DIODE

Absolute maximum ratings (Ta  25°C)

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 15

Drain current

Pulsed IDP *1 60 Source current Continuous IS *3 (Body Diode) Pulsed ISP *1 Avalanche Current IAS *2 7.5 Avalanche Energy EAS *2 m J

Power dissipation (Tc=25℃) PD Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C *3 Limited only by maximum temperature allowed.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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Page Summary Contents For ROHM R6015FNX User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET R6015FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Fast reverse recovery time (trr) 1.2 2) Low on-resistance. 3) Fast switching ...

Page 2 Data Sheet R6015FNX Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet R6015FNX Electrical characteristic curves (Ta=25C) ra in rr ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) Ta=...

Page 4 Data Sheet R6015FNX rw rd ra fe it ta ta ti ra in -S rc -S ta te is ta te -S rc lt [Ω fs Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Source Current vs. Source-Drain Voltage VDS=10V VGS=0...

Page 5 Data Sheet R6015FNX rm li ra ie rm is ta r（ t） rs ry im rr Fig.13 Reverse Recovery Time vs. Source Current Fig.14 Maximum Safe Operating Area Ta=25°C Vgs=0V Operation in this area di/dt=100A/us is lim...

Page 6 Data Sheet R6015FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms V...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.23 MB
Published	June 22, 2026

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