ROHM R6015ANJ User Guide

Summary

This is a datasheet for the ROHM R6015ANJ, a 600V N-channel MOSFET designed for switching applications. The device features low on-resistance, fast switching speed, gate-source voltage guaranteed to ±30V, simple drive circuit requirements, and easy parallel operation. Key specifications include 600V drain-source voltage, ±30V gate-source voltage, 15A continuous drain current, 100W power dissipation, and operating temperatures from -55°C to +150°C. The datasheet provides dimensional drawings, abs

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10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) Low on-resistance. 2) Fast switching speed.

3) Gate-source voltage (VGSS) guaranteed to be ±30V.

4) Drive circuits can be simple. 0.4

5) Parallel use is easy.

(1) Gate (1) (2) (3) (2) Drain (3) Source

Each lead has same dimensions

Applications

Switching 8.9

Packaging specifications

Package Taping

LPTS TL

Type Code

3. 7. LPTL TLL 1.

(1) Gate

Basic ordering unit (pieces) (2) Drain

(3) Source Each lead has same dimensions

Absolute maximum ratings (Ta=25°C) Inner circuit

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS ±30

Continuous ±15ID

Drain current

Pulsed IDP A±60

Continuous

Source current

(Body Diode) ∗1

Pulsed ISP

Avalanche Current IAS 7.5 (1) Gate

(2) Drain

Avalanche Energy ∗2 15.0 ∗1 Body Diode

EAS m J (3) Source

Total power dissipation (Tc=25°C) PD

Channel temperature Tch °C

Range of storage temperature Tstg °C−55 to +150 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed

Thermal resistance

Parameter Symbol Limits Unit

Channel to case 1.25 °C/WRth(ch-c)

Page Summary Contents For ROHM R6015ANJ User Guide

Page 1 10V Drive Nch MOSFET R6015ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) ...

Page 2 R6015ANJ Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=1...

Page 3 R6015ANJ Data Sheet Electrical characteristics curves ST AT IC AI -S -S TA TE ES IS TA : R S( on ) ( AI EN : I (A AI EN : I (A Ta= 25°C Ta= 25°C Pulsed Pulsed PW=100us Operation in this PW=1ms 6.0V ar...

Page 4 R6015ANJ Data Sheet AR IZ ED AN SI EN TH ER AL ES IS TA : r (t EV ER SE EC VE TI E: r ( ns EV ER SE AI EN : I (A VGS= 0V Ta= 25°C Pulsed VDD= 300V ID= 15A Ta= 125°C RG= 10Ω Ciss Coss Ta= 75°C Pulsed T...

Page 5 R6015ANJ Data Sheet Measurement circuits Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche ...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	323.09 KB
Published	June 16, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage for the R6015ANJ?

The maximum drain-source voltage (VDSS) is 600 V.

What is the typical on-resistance (RDS(on)) of this MOSFET?

The typical static drain-source on-state resistance is 0.23 Ω at ID=7.5A and VGS=10V.

Can this MOSFET be used in parallel configurations?

Yes, according to the features list, parallel use is easy.

What is the maximum gate-source voltage (VGSS)?

The gate-source voltage is guaranteed to be ±30 V.