ROHM R6012ANX User Guide

Summary

This datasheet covers the ROHM R6012ANX N-channel power MOSFET rated for 600V drain-source voltage and 12A continuous drain current at 25°C (6.1A at 100°C) in a TO-220FM fully molded package. On-resistance is specified at 0.42Ω maximum with 50W power dissipation and junction-to-case thermal resistance of 2.5°C/W. Key features include fast switching speed, gate-source voltage guaranteed to ±30V, simple drive circuit requirements, and ease of parallel operation. Single-pulse avalanche energy is ra

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R6012ANX Nch 600V 12A Power MOSFET Datasheet

Outline TO-220FM600V

VDSS RDS(on) (Max.) 0.42Ω ID 12A PD 50W

Features Inner circuit 1) Low on-resistance.

2) Fast switching speed. (1) Gate (2) Drain

3) Gate-source voltage (VGSS) guaranteed to be ±30V. (3) Source

4) Drive circuits can be simple. *1 Body Diode

5) Parallel use is easy. 6) Pb-free lead plating ; Ro HS compliant

Packaging specifications

Packing Bulk

Reel size (mm) Tape width (mm)

Application

Type Basic ordering unit (pcs)

Switching Power Supply

Taping code

Marking R6012ANX

Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit

Drain - Source voltage VDSS *1

Tc = 25°C ID ±12

Continuous drain current

Tc = 100°C ID ±6.1

Pulsed drain current ID,pulse ±48

Gate - Source voltage VGSS ±30

Avalanche energy, single pulse EAS *3 9.6 m J

Avalanche energy, repetitive EAR 3.5 m J

Avalanche current IAR

Power dissipation (Tc = 25°C) PD Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C

Reverse diode dv/dt dv/dt *5 V/ns

Page Summary Contents For ROHM R6012ANX User Guide

Page 1 R6012ANX Nch 600V 12A Power MOSFET Datasheet Outline TO-220FM600V VDSS RDS(on) (Max.) 0.42Ω ID 12A PD 50W Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3)...

Page 2 Data Sheet R6012ANX Absolute maximum ratings Parameter Symbol Conditions Values Unit VDS = 480V, ID = 12A Drain - Source voltage slope dv/dt V/ns Tj = 125°C Thermal resistance Values Parameter Symbo...

Page 3 Data Sheet R6012ANX Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. *6 gfs VDS = 10V, ID = 6.0A 3.5 8.5Transconductance Input capacitance Ciss VGS = 0V O...

Page 4 Data Sheet R6012ANX Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Inverse diode continuous, IS *1 forward current Tc = 25°C I...

Page 5 Data Sheet R6012ANX or al iz ed ra ns ie nt he rm al es is ta nc : r Electrical characteristic curves Po er is si pa tio /P ax . [ Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating ...

Page 6 Data Sheet R6012ANX Av al an ch En er gy / E ax . [ Av al an ch ur re nt [A Electrical characteristic curves Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses Ta = 25ºC Ta = 25ºC...

Page 7 Data Sheet R6012ANX ra in ur re nt [A ra in ur re nt [A Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Ta = 25ºC 8.0V 6.5V Ta = 25ºC...

Page 8 Data Sheet R6012ANX ra in So ur ce re ak do Vo lta ge [V at Th re sh ol Vo lta ge V] (B )D SS Electrical characteristic curves S( th ) [ Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristi...

Page 9 Data Sheet R6012ANX St at ic ra in So ur ce n- St at es is ta nc St at ic ra in So ur ce n- St at es is ta nc Electrical characteristic curves : R : R S( on ) [ S( on ) [ Fig.15 Static Drain - Source...

Page 10 Data Sheet R6012ANX Sw itc hi ng im : t [n s] ap ac ita nc : C [p F] Electrical characteristic curves Fig.18 Typical Capacitance Fig.19 Coss Stored Energy vs. Drain - Source Voltage Ta = 25ºC Ta = 25...

Page 11 Data Sheet R6012ANX In ve rs io de or ar ur re nt [A Electrical characteristic curves Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time vs. Source - Drain Voltage vs.Inverse Diode For...

Page 12 Data Sheet R6012ANX Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche ...

Page 13 Data Sheet R6012ANX Dimensions (Unit : mm) ATO-220FM MILIMETERS INCHES MIN MAX MIN MAX 16.60 17.60 0.654 0.693 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 13/13 201...

Page 14 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	14
File Size	1019.84 KB
Published	June 22, 2026

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Frequently Asked Questions

What is the absolute maximum Drain-Source voltage rating?

The device has a maximum Drain - Source voltage of 600 V.

How much power can the MOSFET dissipate at room temperature (25°C)?

At T = 25<0xE2><0x80><0xAF>°C, the continuous power dissipation is 50 W.

Can this device be used in life-critical applications, such as medical instruments?

No, it is not designed for equipment requiring an extremely high level of reliability or posing a direct threat to human life.