ROHM R6012ANJ User Guide

Summary

This high-performance N-channel MOSFET is engineered for efficient, reliable switching in electronic power applications. The product manual provides comprehensive technical data sheets, detailing absolute maximum ratings, low on-resistance performance, and fast switching characteristics across varying temperatures. It is designed for engineers developing general electronic equipment, including consumer appliances, communication devices, and office automation systems requiring durable power control.

📄 Preview ‹ PAGE OF 6 ›

‹

›

Page 1 Text Content

10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

Features 1) Low on-resistance.

2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

4) Drive circuits can be simple. 2.7

5) Parallel use is easy. (1) Gate (1) (2) (3) (2) Drain (3) Source

Each lead has same dimensions

Applications

8.9 Switching 4.8

Packaging specifications

Package Taping

LPTS TL

(1) Gate

Type (1) (2) (3)

(2) Drain

LPTL TLL

(3) Source Each lead has same dimensions

Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25°C) Inner circuit

Parameter Symbol Limits Unit

Drain-source voltage VDSS

Gate-source voltage VGSS ±30

Continuous ±12ID

Drain current

Pulsed IDP A±48

Continuous

Source current

(Body Diode) ∗1

Pulsed ISP

Avalanche Current IAS

(1) Gate (2) Drain

Avalanche Energy EAS ∗2 9.6 m J ∗1 Body Diode

(3) Source

Total power dissipation (Tc=25°C) PD

Channel temperature Tch °C

Range of storage temperature Tstg °C−55 to +150 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed

Thermal resistance

Parameter Symbol Limits Unit

Channel to case 1.25 °C/WRth(ch-c)

Page Summary Contents For ROHM R6012ANJ User Guide

Page 1 10V Drive Nch MOSFET R6012ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) ...

Page 2 R6012ANJ Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS ID=1...

Page 3 R6012ANJ Data Sheet Electrical characteristics curves ST AT IC AI -S -S TA TE AI EN : I (A AI EN : I (A ES IS TA : R S( on ) ( Ta= 25°C Pulsed Ta= 25°C Pulsed Operation in this area is limited PW=100u...

Page 4 R6012ANJ Data Sheet VGS= 0V Ta= 25°C Pulsed VDD= 300V AR IZ ED AN SI EN TH ER AL ID= 12A Ta= 125°C RG= 10Ω ES IS TA : r (t EV ER SE EC VE TI E: r ( ns EV ER SE AI EN : I (A Ciss Coss Pulsed Ta= 75°C T...

Page 5 R6012ANJ Data Sheet Measurement circuits Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche ...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	321.99 KB
Published	July 15, 2026

0 views

Enter the captcha to get the download link: