ROHM R5019ANX User Guide

Summary

Manage demanding switching power applications with this high-efficiency N-channel MOSFET. Engineered for robust performance up to 500V and featuring low on-resistance and low input capacitance. The comprehensive datasheet provides detailed operational data, including absolute maximum ratings, thermal characteristics, full transfer curves, and precise timing measurements necessary for effective circuit design in power electronics. Ideal for engineers developing reliable switching circuits that require high reliability and efficiency performance under varying temperature conditions.

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Data Sheet

10V Drive Nch MOSFET R5019ANX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1) Low on-resistance. 1.2

2) Low input capacitance.

3) High ESD. 0.8

(1) Gate (2) Drain 2.54 0.75 2.62.54

(3) Source (2) (3)(1)

Application Switching

Packaging specifications Inner circuit

Package Bulk Type Code

Basic ordering unit (pieces) .0 2. 8.

R5019ANX

(1) Gate (1) (3)(2)

Absolute maximum ratings (Ta = 25C) (2) Drain

(3) Source

1 BODY DIODE

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID *3 19

Drain current

Pulsed IDP *1 76 Source current Continuous IS *3

(Body Diode) Pulsed ISP *1

Avalanche current IAS *2 9.5 Avalanche energy EAS *2 24.3 m J Power dissipation PD *4

Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, VDD=50V, RG=25, Tch=25C

*3 Limited only by maximum temperature allowed.

*4 TC=25C

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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Page Summary Contents For ROHM R5019ANX User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET R5019ANX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1) Low on-resistance. 1.2 2) Low input capacitance. 3) High ESD. 0.8 (1) Gate (2...

Page 2 Data Sheet R5019ANX Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet R5019ANX IC IN -S -S IS (o (Ω (V (t ra in rr Electrical characteristic curves Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) Fig.3 Typical Transfer Chara...

Page 4 Data Sheet R5019ANX IT IN IM IT Fig.10 Typical Capacitance vs. Fig.11 Dynamic Input Characteristics Fig.12 Reverse Recovery Time vs. Drain-Source Voltage Source Current Ta= 25℃ VDD= 250V ID= 19A RG= 1...

Page 5 Data Sheet R5019ANX Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveform...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.16 MB
Published	June 17, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDSS) is 500V at 25°C.

What package type does this MOSFET use?

It uses a TO-220FM package and is supplied in bulk packaging.

What is the max continuous drain current?

The maximum continuous drain current is ±19A at 25°C.

What are the main features of this MOSFET?

Features include low on-resistance, low input capacitance, and high ESD.