ROHM R5009FNX User Guide

Summary

This manual details the specifications and application of the ROHM R5009FNX TO-220FM N-channel MOSFET, featuring a 10V drive, 500V drain-source voltage, and 9A current rating. It targets electronics engineers and hobbyists seeking efficient switching solutions with low on-resistance and fast recovery times.

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Data Sheet

10V Drive Nch MOSFET R5009FNX Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TO-220FM

Features

1)Fast reverse recovery time (trr) 1.2

2) Low on-resistance.

3) Fast switching speed. 0.8 2.54 0.75 2.62.54

4) Gate-source voltage

　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy.

Application Switching Inner circuit

Packaging specifications

Package Bulk .0

Type 2. 8.

Basic ordering unit (pieces) (1) Gate

R5009FNX (2) Drain (3) Souce

Absolute maximum ratings (Ta  25C) *1 Body Diode

Parameter Symbol Limits Unit

Drain-source voltage VDSS Gate-source voltage VGSS 30

Continuous ID 9

Drain current

Pulsed IDP 36

Source current Continuous IS *3 (Body Diode) *1

Pulsed ISP

Avalanche Current IAS 4.5 Avalanche Energy EAS *2 5.4 m J

Power dissipation (Tc=25℃) PD Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 L 500μH, VDD=50V, Rg=25,starting Tch=25C *3 Limited only by maximum temperature allowed.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Case Rth (ch-c) 2.5 C / W

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Page Summary Contents For ROHM R5009FNX User Guide

Page 1 Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM Features 1)Fast reverse recovery time (trr) 1.2 2) Low on-resistance. 3) Fast switching s...

Page 2 Data Sheet R5009FNX Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 100 n A VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS I...

Page 3 Data Sheet R5009FNX IC IN -S -S (t h) Electrical characteristics curves IS IN [A VGS= 8.0V VGS= 10V Ta=25°C VDS= 10V VGS= 8.0V VGS= 10V VGS= 7.0V Pulsed Pulsed VGS= 7.0V VGS= 6.5V VGS= 6.5V Ta= 125°C...

Page 4 Data Sheet R5009FNX IZ IE IT IM rr[ s] IS t) Ta=25°C Ta=25°C Pulsed td(off) VDD=250V VGS=10V tf RG=10Ω Pulsed td(on) Ta=25°C VDD=250V ID= 9A Pulsed IN (A IT IN IM ns SOURCE-CURRENT : IS[V] TOTAL GATE ...

Page 5 Data Sheet R5009FNX Measurement circuits Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms V...

Page 6 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	6
File Size	1.00 MB
Published	June 16, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage for this MOSFET?

The absolute maximum drain-source voltage (V_DSS) is 500V.

What is the typical on-resistance (R_DS(on))?

The static drain-source on-state resistance is typically 0.65Ω at I_D=4.5A and V_GS=10V.

What is the absolute maximum gate-source voltage?

The absolute maximum gate-source voltage (V_GSS) is ±30V.

Is this MOSFET suitable for parallel use?

Yes, parallel use is listed as one of its features, indicated as being easy.