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ROHM QSX6 User Guide

Summary

The QSX6 is a high-performance transistor designed for reliable low-frequency amplifier and driver applications. This comprehensive manual provides crucial engineering details, including absolute maximum ratings, detailed electrical characteristics such as saturation voltage and current gain, and performance curves across various operating conditions. It is an essential resource for electronics designers building stable amplification or signal drive circuits requiring documented reliability and precision component selection.

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Transistors

Low frequency amplifier QSX6

Application External dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) A collector current is large. 2) VCE(sat) 350m V At IC = 1A / IB = 50m A

Each lead has same dimensions

Abbreviated symbol : X06

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit (4 (5 (6

Collector-base voltage VCBO (4)(5)(6)

Collector-emitter voltage VCEO

Emitter-base voltage VEBO IC 1.5

Collector current

ICP ∗1 ∗2 m W

Power dissipation PC

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substratet

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=10µA Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=10µA Collector cutoff current ICBO n A VCB=30V Emitter cutoff current IEBO n A VEB=6V Collector-emitter saturation voltage VCE(sat) m V IC=1A, IB=50m A DC current gain h FE VCE=2V, IC=100m A Transition frequency f T MHz VCE=2V, IE=−100m A, f=100MHz

Collector output capacitance Cob p F VCB=10V, IE=0A, f=1MHz

∗ Pulsed

Rev.A 1/2

Page Summary Contents For ROHM QSX6 User Guide

Page 1 Transistors Low frequency amplifier QSX6 Application External dimensions (Unit : mm) Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350m V At IC = 1A / IB = 50m A...
Page 2 IT TE IN IT ib (p F) LL TO TP IT ob (p F) LL IC QSX6 IN h F Transistors Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) Electrical characteristic curves VCE=2V IC/IB=...
Page 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 3
File Size 64.01 KB
Published June 18, 2026
4 views

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Frequently Asked Questions

Can I use this transistor in life-critical systems like aerospace equipment?

No. For applications requiring extremely high reliability, such as medical or transportation equipment, you must consult a sales representative first.

What substrate size is required for mounting the device?

The device must be mounted on a 25mm x 25mm x 0.8mm Ceramic substrate to dissipate power effectively.

How much power can I safely dissipate using this component at maximum ratings?

The maximum specified power dissipation ($P_c$) is 1.25 W, provided it is mounted on the recommendation ceramic substrate.