ROHM QST3 User Guide

Transistors

General purpose amplification (−30V, −5A) QST3

Application External dimensions (Unit : mm)

Low frequency amplifier Driver

Features 1) Collector current is large. 2) Collector saturation voltage is low. VCE(sat) −250m V At IC = −2A / IB = −40m A

ROHM : TSMT6 Each lead has same dimensions

Abbreviated symbol : T03

Absolute maximum ratings (Ta=25°C) Equivalent circuit

Parameter Symbol Limits Unit (4 (5 (6

Collector-base voltage VCBO −30 6pin 5pin 4pin

Collector-emitter voltage VCEO −30

Emitter-base voltage VEBO −6 IC −5

Collector current

ICP −8 ∗1

Power dissipation PC

1pin 2pin 3pin

Junction temperature Tj °C Range of storage temperature Tstg −55 to +150 °C ∗1 Single pulse, Pw=1ms ∗2 Each Terminal Mounted on a Recommended ∗3 Mounted on a 25mm×25mm× 0.8mm Ceramic substratet

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −30 IC= −10µA Collector-emitter breakdown voltage BVCEO −30 IC= −1m A Emitter-base breakdown voltage BVEBO −6 IE= −10µA

Collector cutoff current ICBO −100 n A VCB= −30V

Emitter cutoff current IEBO −100 n A VEB= −6V Collector-emitter saturation voltage VCE(sat) −170 −250 m V IC= −2A, IB= −40m A DC current gain h FE VCE= −2V, IC= −500m A

Transition frequency f T MHz VCE= −2V, IE=500m A, f=100MHz Corrector output capacitance Cob p F VCB= −10V, IE=0A, f=1MHz

∗Pulsed

Rev.B 1/2