ROHM QS8M13 User Guide

Summary

The QS8M13 is a high-power dual N-channel and P-channel MOSFET designed for efficient switching at low voltages using a 4V drive system. Ideal for power electronics applications, this component features ultra-low on-resistance compared to its robust TSMT8 package. The accompanying manual provides deep technical specifications, covering electrical characteristics, dynamic switching performance across various temperatures, 그리고 detailed measurement guides necessary for reliable circuit design and integration.

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Data Sheet

4V Drive Nch + Pch MOSFET QS8M13

Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8

Silicon P-channel MOSFET

Features 1) Low on-resistance.

2) High power package(TSMT8). 3) Low voltage drive(4V drive).

Abbreviated symbol : M13

Application

Switching Inner circuit

Packaging specifications

Package Taping (1) Tr1 Source

(2) Tr1 Gate

Type Code TCR

(3) Tr2 Source Basic ordering unit (pieces) (4) Tr2 Gate

(5) Tr2 Drain

QS8M13 (6) Tr2 Drain

(7) Tr1 Drain (1) (2) (3) (4)

(8) Tr1 Drain

∗1 ESD PROTECTION DIODE ∗2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Limits

Parameter Symbol Unit

Tr1 : N-ch Tr2 : P-ch

Drain-source voltage VDSS 30

Gate-source voltage VGSS 20 20 Continuous ID 6 5

Drain current

Pulsed IDP *1 18 18 Source current Continuous Is 1.0 1.0 (Body Diode) Pulsed Isp *1 18 *2

1.5 W / TOTAL

Power dissipation PD

1.25 W / ELEMENT

Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

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Page Summary Contents For ROHM QS8M13 User Guide

Page 1 Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSMT8 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(TSMT8). 3)...

Page 2 Data Sheet QS8M13 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown volta...

Page 3 Data Sheet QS8M13 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown volta...

Page 4 Data Sheet QS8M13 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta [m [m ra in rr 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig....

Page 5 Data Sheet QS8M13 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta= 125℃ Ta= 75°C Ta= 25°C T...

Page 6 Data Sheet QS8M13 rm li ra ie rm is ta r（ t） Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Ta=25°C Operation in this area is limited by RDS(on) f=1MHz (VGS = 1...

Page 7 Data Sheet QS8M13 〈Tr.2(Pch)〉 ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) VGS=-2.8V VGS...

Page 8 Data Sheet QS8M13 rw rd ra fe it ta it in im rc rr Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=-10V VDS=-10V pulsed pulsed Ta= 125°C Ta= 75°C Ta= 25°...

Page 9 Data Sheet QS8M13 rm li ra ie rm is ta r（ t） Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Ta=25°C Operation in this area is limited by RDS(on) f=1MHz (VGS = -...

Page 10 Data Sheet QS8M13 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Swi...

Page 11 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	11
File Size	1.37 MB
Published	July 15, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage rating for this device?

The drain-source voltage (VDS) ranges from -30 V to +30 V.

Does packaging require special heat dissipation consideration?

For single pulse operation, the thermal resistance Rth = 100°C/W on a ceramic board is specified.

Are there any electrical precautions I must follow during installation or use?

The product might cause chip aging and breakdown in large electrified environments; ESD protection circuit design is recommended.

What are the typical static drain-source on-state resistances (Rds(on))?

For N-channel (Tr1), Rds(on) is typically 28 mΩ, and for P-channel (Tr2), it is typically 40 mΩ.