ROHM QS8K13 User Guide

Summary

This high-performance N-channel MOSFET is engineered for efficient switching in demanding power electronics applications. Featuring low on-resistance and housed in a robust TSMT8 package, it offers reliable operation with specialized 4V drive capability. This manual serves as a critical guide for electrical engineers and system designers, providing comprehensive technical data. It details absolute maximum ratings, extensive electrical characteristics curves (including switching timing), thermal resistance models, and parameter specifications necessary to ensure optimal integration and reliable circuit performance.

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Data Sheet

4V Drive Nch + Nch MOSFET QS8K13 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET TSMT8

Features 1) Low on-resistance. 2) High power package(TSMT8).

3) Low voltage drive(4V drive).

Abbreviated symbol : K13

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TCR Basic ordering unit (pieces)

QS8K13

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source

(4) Tr2 Gate Absolute maximum ratings (Ta = 25C) (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4)

Parameter Symbol Limits Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

(8) Tr1 Drain

Drain-source voltage VDSS ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 6

Drain current

Pulsed IDP *1 18

Source current Continuous Is

(Body Diode) Pulsed Isp *1

*2 1.5 W / TOTAL

Power dissipation PD

1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

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Page Summary Contents For ROHM QS8K13 User Guide

Page 1 Data Sheet 4V Drive Nch + Nch MOSFET QS8K13 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT8 Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V driv...

Page 2 Data Sheet QS8K13 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gatesource leakage IGSS 10 A VGS=20V, VDS=0...

Page 3 Data Sheet QS8K13 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta [m [m ra in rr Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Ou...

Page 4 Data Sheet QS8K13 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta= 125℃ Ta= 75°C Ta= 25°C T...

Page 5 Data Sheet QS8K13 rm li ra ie rm is ta r（ t） Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Ta=25°C Operation in this area is limited by RDS(on) f=1MHz (VGS = 1...

Page 6 Data Sheet QS8K13 Measurement circuits Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms ...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.22 MB
Published	June 02, 2026

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Frequently Asked Questions

What are the absolute maximum ratings for this MOSFET when Ta = 25°C?

The Drain-source voltage (Vdss) limit is 30V, and the Gate-source voltage (Vgs) limits are ±20V.

Does QS8K13 have low on-resistance or specific channel properties?

It features low on-resistance and is an N-channel MOSFET with a static drain-source on-state resistance (RDS(on)) between 25 and 35 mΩ.

What type of packaging and maximum power dissipation does it support?

It uses a high power TSMT8 package. The total rated power dissipation is 1.25 W.

How must the MOSFET be installed for thermal considerations?

The device requires being mounted on a ceramic board for accurate performance rating.