ROHM QS8J5 User Guide

Summary

Discover the QS8J5, a high-performance P-Channel MOSFET engineered with low on-resistance and a robust TSMT8 power package. Designed for applications requiring reliable switching and efficiency, this transistor features low voltage drive capability (4V). The comprehensive manual provides engineers with essential data, including absolute maximum ratings, detailed electrical characteristics, extensive thermal resistance parameters, and comprehensive performance curves to ensure optimal design integration into general electronic equipment like communication devices and appliances.

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4V Drive Pch + Pch MOSFET QS8J5

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET TSMT8

Features 1) Low on-resistance.

2) High power package(TSMT8). 3) Low voltage drive(4V drive).

Abbreviated symbol : J05

Application Switching

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

QS8J5

(1) Tr1 Source (2) Tr1 Gate

(3) Tr2 Source Absolute maximum ratings (Ta = 25C) (4) Tr2 Gate (5) Tr2 Drain

(6) Tr2 Drain

Parameter Symbol Limits Unit

∗1 ESD PROTECTION DIODE (7) Tr1 Drain ∗2 BODY DIODE (8) Tr1 Drain

Drain-source voltage VDSS 30 Gate-source voltage VGSS 20

Continuous ID 5

Drain current

Pulsed IDP 20 Source current Continuous Is 1

(Body Diode) *1

Pulsed Isp 20

1.5 W / TOTAL PDPower dissipation *2 1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

83.3 °C / W /TOTAL

Channel to ambient Rth (ch-a)

°C / W /ELEMENT

* Each terminal mounted on a ceramic board.

www.rohm.com

1/5 2010.01 - Rev.A

Page Summary Contents For ROHM QS8J5 User Guide

Page 1 4V Drive Pch + Pch MOSFET QS8J5 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). Abbrevia...

Page 2 Data Sheet QS8J5 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=20V, VDS=0...

Page 3 Data Sheet QS8J5 IC IN -S -S IC IN -S -S IS (o ] IS (o ] IN -I [A Electrical characteristic curves Ta=25°C Ta=25°C VDS= -10V Pulsed Pulsed Pulsed VGS= -3.0V VGS= -3.0V Ta= 125°C Ta= 75°C VGS= -2.8V...

Page 4 Data Sheet QS8J5 IC IN -S -S IS (O ] Ta=25°C Ta=25°C VDD= -15V Pulsed td(off) VGS= -10V RG=10 ID= -5.0A Pulsed Ta=25°C ID= -2.5A VDD= -15V td(on) ID= -5.0A RG=10Ω Pulsed TOTAL GATE CHARGE : Qg [n C...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	280.02 KB
Published	June 18, 2026

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