ROHM QS8J4 User Guide

Summary

Maximize switching efficiency with the QS8J4 P-channel MOSFET, a robust semiconductor solution built for high-power applications. Featuring ultra-low on-resistance and low voltage drive requirements, it operates reliably within its TSMT8 package. This comprehensive datasheet provides engineers with full technical details, including absolute maximum ratings, thermal management curves, and all necessary electrical characteristics. It is designed for developers working on general-use electronic equipment such as communication devices, AV systems, and office automation tools.

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4V Drive Pch + Pch MOSFET QS8J4 Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET TSMT8

Features 1) Low on-resistance. (1) (2) (4)(3)

2) High power package(TSMT8). 3) Low voltage drive(4V drive).

Abbreviated symbol : J04

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TR Basic ordering unit (pieces) (1) Tr1 Source

(2) Tr1 Gate

QS8J4

(3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain

(6) Tr2 Drain (7) Tr1 Drain

Absolute maximum ratings (Ta = 25C)

(8) Tr1 Drain

Parameter Symbol Limits Unit

∗1 ESD PROTECTION DIODE Drain-source voltage VDSS 30 ∗2 BODY DIODE

Gate-source voltage VGSS 20 Continuous ID 4

Drain current

Pulsed IDP 16 Source current Continuous Is 1 (Body Diode) *1 Pulsed Isp 16 1.5 W / TOTAL PDPower dissipation *2 1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

83.3 °C / W /TOTAL

Channel to Ambient Rth (ch-a)

°C / W /ELEMENT

* Each terminal mounted on a ceramic board.

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Page Summary Contents For ROHM QS8J4 User Guide

Page 1 4V Drive Pch + Pch MOSFET QS8J4 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low on-resistance. (1) (2) (4)(3) 2) High power package(TSMT8). 3) Low voltage drive(4V d...

Page 2 QS8J4 Data Sheet Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=20V, VDS=0...

Page 3 QS8J4 Data Sheet IC IN -S -S IC IN -S -S Electrical characteristic curves IS (o IS (o IN -I [A Ta=25°C VGS= -10V Ta=25°C VDS= -10V Pulsed VGS= -10V VGS= -4.5V Pulsed Pulsed VGS= -4.5V VGS= -4.0V Ta= ...

Page 4 QS8J4 Data Sheet IC IN -S -S IS (O Ta=25°C ID= -2.0A td(off) VDD= -15V VGS= -10V ID= -4.0A tf RG=10Ω Pulsed Ta=25°C td(on) VDD= -15V ID= -4.0A Ta=25°C RG=10Ω Pulsed tr Pulsed GATE-SOURCE VOLTAGE : -VG...

Page 5 QS8J4 Data Sheet Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS ID IG(Const.) Qgs Qgd Charg...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	339.49 KB
Published	July 10, 2026

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Frequently Asked Questions

What is the continuous drain current (ID) rating?

The continuous Drain current (ID) rating is specified for both Tr1 and Tr2, allowing up to -4A.

What dissipation limits must be observed for this MOSFET?

The total power dissipation must not exceed 1.5 W, and the ambient temperature range is -55 to +150 °C.

Is this product suitable for critical safety systems?

No, it should not be used in equipment requiring an extremely high level of reliability, such as medical or aerospace machinery.

What are the maximum working temperatures?

The channel temperature (Tch) limit is 150 °C, and the general storage temperature range (Tstg) is -55 to +150 °C.