ROHM QS8J11 User Guide

Summary

P-channel MOSFET designed for efficient switching applications, this component is engineered with low on-resistance and features a compact high-power package optimized for 1.5V drive systems. The accompanying technical manual and data sheet provide comprehensive electrical and thermal specifications essential for accurate circuit design. It covers absolute maximum ratings, static and dynamic characteristics (such as $R_{DS(on)}$ and switching times), thermal resistance, and detailed measurement procedures, making it ideal for power electronics engineers developing reliable, high-performance circuits.

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Data Sheet

1.5V Drive Pch + Pch MOSFET QS8J11 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8

Features 1) Low On-resistance.

2) Small high power package. 3) Low voltage drive(1.5V drive).

Abbreviated symbol : J11

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TCR Basic ordering unit (pieces) QS8J11

(1) Tr1 Source (2) Tr1 Gate

(3) Tr2 Source ∗1 ∗1

Absolute maximum ratings (Ta = 25C) (4) Tr2 Gate (5) Tr2 Drain

Parameter Symbol Limits Unit (6) Tr2 Drain

(7) Tr1 Drain ∗1 ESD PROTECTION DIODE

Drain-source voltage VDSS 12

(8) Tr1 Drain ∗2 BODY DIODE

Gate-source voltage VGSS 0 to 8 Continuous ID 3.5

Drain current

Pulsed IDP *1 12

Source current Continuous Is 1 (Body Diode) Pulsed Isp *1 12

1.5 W / TOTAL PDPower dissipation *2 1.25 W / ELEMENT

Channel temperature Tch C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

83.3 ˚C / W /TOTAL

Channel to Ambient Rth (ch-a)

˚C / W /ELEMENT

* Mounted on a ceramic board.

Page Summary Contents For ROHM QS8J11 User Guide

Page 1 Data Sheet 1.5V Drive Pch + Pch MOSFET QS8J11 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT8 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive(1.5V d...

Page 2 Data Sheet QS8J11 Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=8V, VDS=0...

Page 3 Data Sheet QS8J11 ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta ra in rr -I Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Outpu...

Page 4 Data Sheet QS8J11 ta ti ra in -S rc -S ta te is ta ra in rr ta ti ra in -S rc -S ta te is ta Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Drain...

Page 5 Data Sheet QS8J11 te -S rc lt Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C Ta=25°C VDD=-6V f=1MHz ID=-3.5A VGS=0V Pulsed Total Gate Charge : -Qg [n ...

Page 6 Data Sheet QS8J11 Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VDS Qg IG(Const.) D.U.T. Qgs Q...

Page 7 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	7
File Size	1.22 MB
Published	June 05, 2026

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Frequently Asked Questions

What is the maximum drain-source voltage (VDS) rating?

The absolute maximum rating for VDS is -12 V.

How much power dissipation is rated per element?

The maximum power dissipation (Pd) limit is 1.25 W / ELEMENT.

What is the typical static on-state resistance range?

Static Drain-Source On-State Resistance (Rds(on)) ranges from -55 to 82 mΩ, depending on operating conditions.

Are there specific instructions for handling electric environments?

Yes, the manual warns that this product might cause chip aging and breakdown under large electrified environments and advises designing an ESD protection circuit.