ROHM QS6M4 User Guide

Summary

The QS6M4 is a powerful, combined MOSFET integrated circuit housed in a TSMT6 package, ideal for robust power switching applications like load switches and inverters. This component features both P-channel and N-channel MOSFETs, delivering low on-state resistance and rapid switching capability with minimal 2.5V drive required. The accompanying manual provides comprehensive technical documentation, including detailed electrical characteristics, thermal limits, dynamic measurements, and absolute maximum ratings, helping engineers reliably design next-generation power electronics circuits.

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QS6M4

Transistors

2.5V Drive Nch+Pch MOSFET QS6M4

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET

TSMT6

Silicon N-channel MOSFET

1.0MAX

Features 1) The QS6M4 combines Pch MOSFET with a Nch

MOSFET in a single TSMT6 package. (1) (2) (3)

1pin mark

2) Low on-state resistance with a fast switching. 0.4 0.16

3) Low voltage drive (2.5V).

Each lead has same dimensions

Abbreviated symbol : M04

Applications Load switch, inverter

Packaging specifications Equivalent circuit Package Taping (6) (5) (4)

Type Code TR

Basic ordering unit (pieces)

QS6M4

∗1 (1) Tr1 (Nch) Source

Absolute maximum ratings (Ta=25°C)

(2) Tr1 (Nch) Gate Limits (3) Tr2 (Pch) Drain

Parameter Symbol Unit (1) (2) (3)

(4) Tr2 (Pch) Source

Nchannel Pchannel

∗1 ESD PROTECTION DIODE (5) Tr2 (Pch) Gate

Drain-source voltage VDSS −20 V30 ∗2 BODY DIODE (6) Tr1 (Nch) Drain Gate-source voltage VGSS ±12 V±12 Continuous ID ±1.5 A±1.5

Drain current

∗1 Pulsed IDP ±6.0 A±6.0 Continuous Source current IS −0.75 A0.8 (Body diode) ∗1 Pulsed ISP −6.0 A6.0

1.25 W / TOTAL

∗2 Total power dissipation PD

W / ELEMENT0.9 Channel temperature °CTch

Storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance Parameter Symbol Limits Unit

°C / W / TOTAL

Channel to ambient Rth (ch-a)

°C / W / ELEMENT

∗ Mounted on a ceramic board

Rev.B 1/5

Page Summary Contents For ROHM QS6M4 User Guide

Page 1 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT6 Silicon N-channel MOSFET 1.0MAX Features 1) The QS6M4 combines Pch MOSFET with a Nch M...

Page 2 QS6M4 Transistors Electrical characteristics (Ta=25°C) <Tr1. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±12V / VDS=0V Drain-source breakdown...

Page 3 QS6M4 Transistors Electrical characteristics (Ta=25°C) <Tr2. P-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS= ±12V / VDS=0V Drain-source breakdow...

Page 4 QS6M4 IC IN -S IN IT p F Transistors -S IS on ) ( N-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=0V VGS=4.5V ID=1.5A RG=10Ω RG=10Ω Ciss Pulsed Pulsed td (off)...

Page 5 IC IN -S QS6M4 -S IS on ) ( IN −I IT p F Transistors P-ch Electrical characteristic curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD= −15V VDD= −15V VGS=0V VGS= −4.5V ID= −1.5A tf RG=10Ω RG=10Ω Ciss Pulsed P...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	98.33 KB
Published	July 22, 2026

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Frequently Asked Questions

What precautions should I take when designing into this product?

Always account for derating characteristics and implement sufficient safety features, such as anti-flammability or fail-safe measures.

What are the designated applications or usages for this MOSFET?

It is primarily designed to be used as a load switch or in an inverter circuit.

What does 'Tch' represent, and what is its limit?

'Tch' represents the Channel temperature, which must not exceed 150 °C.