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ROHM QS5U27 User Guide

Summary

The QS5U27 is a high-performance P-channel MOS FET designed for reliable switching in load switch and DC/DC conversion applications. Featuring low on-state resistance, ultrafast switching capability, and an integrated Schottky barrier diode for enhanced protection, it operates efficiently with just a 2.5V drive voltage. This technical resource provides comprehensive material datasheets, including absolute maximum ratings, detailed electrical characteristics (e.g., RDS(on), capacitance), and typical performance curves essential for engineers designing advanced power management circuits.

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QS5U27

Transistor

2.5V Drive Pch+SBD MOS FET QS5U27

Structure External dimensions (Unit : mm) Silicon P-channel MOS FET

TSMT5

Schottky Barrier DIODE

1.0MAX

Features 1) The QS5U27 combines Pch MOS FET with a 0~0.1

Schottky barrier diode in a TSMT5 package. (1) (3)(2)

2) Low on-state resistance with fast switching. 0.4 0.16

3) Low voltage drive (2.5V).

Each lead has same dimensions

4) Built-in schottky barrier diode has low forward voltage.

Abbreviated symbol : U27

Applications load switch, DC/DC conversion

Packaging specifications Equivalent circuit

Package Taping (5) (4) 1.

Code TR

Basic ordering unit (pieces) ∗2

QS5U27

∗1 (1)Gate

(2)Source (1) (2) (3) (3)Anode (4)Cathode

∗1 ESD protection diode (5)Drain ∗2 Body diode ∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.

Rev.A 1/4

Page Summary Contents For ROHM QS5U27 User Guide

Page 1 QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TSMT5 Schottky Barrier DIODE 1.0MAX Features 1) The QS5U27 combines Pch MOS FET ...
Page 2 QS5U27 Transistor Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage −20 VVDSS Gate-source voltage ±12 VVGSS Continuous ±1.5 AID Drain current Pulsed ±...
Page 3 IN −I IC IN -S QS5U27 IN −I -S IS on ) ( Transistor Electrical characteristic curves VDS=−10V VGS=−4.5V VGS=−4V Pulsed Pulsed Pulsed Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=125°C Ta=25°C Ta=75°C Ta=75°C Ta=−...
Page 4 QS5U27 -S LT Transistor Ta=25°C VDD=−15V ID=−1.5A RG=10Ω Pulsed TOTAL GATE CHARGE : Qg (n C) Fig.10 Dynamic Input Characteristics Measurement circuits Pulse Width VGS ID VGS VDS 10% trtd(on) trtd(off)...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 81.80 KB
Published June 05, 2026
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Frequently Asked Questions

How is the QS5U27 device designed?

It combines a Pch MOS FET and a Schottky barrier diode within a TSMT5 package.

What must be considered regarding total power dissipation when using this component?

The total integrated power dissipation ($PD$) cannot exceed 1.25 W, and the device must be mounted on a ceramic board.

Does the device include protection against static electricity?

Yes, it features a built-in Schottky barrier diode placed between the gate and source to protect against static electricity when in use.

Can this product be used for life-critical equipment?

It is meant for ordinary electronic equipment, but users must consult a sales representative if using it with devices that endanger human life, such as medical or aerospace machinery.

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