ROHM QS5U26 User Guide
Summary
The QS5U26 is a versatile power component integrating a P-channel MOSFET with a Schottky Barrier Diode in one package. Designed for efficient switching applications, it features low on-state resistance and requires minimal 2.5V drive voltage. This manual provides comprehensive technical data, including detailed electrical characteristics, absolute maximum ratings, and performance graphs for reliable circuit design. Ideal for electronic appliances and general power control circuits requiring fast, durable switching capability.
Page 1 Text Content
QS5U26
Transistor
2.5V Drive Pch+SBD MOSFET QS5U26 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET
TSMT5
Schottky Barrier DIODE
1.0MAX
Features 1) The QS5U26 combines Pch MOSFET with 0~0.1
a Schottky barrier diode in a TSMT5 package. (1) (3)(2)
2) Low on-state resistance with fast switching. 0.4 0.16
3) Low voltage drive (2.5V).
Each lead has same dimensions
4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U26
Applications Switching
Packaging specifications Equivalent circuit
Package Taping
Code TR 0. 3~ 0.
Basic ordering unit (pieces)
QS5U26
(1)Gate (2)Source
(3)Anode (4)Cathode
∗1 ESD protection diode
∗2 Body diode (5)Drain
Rev.B 1/4
Page Summary Contents For ROHM QS5U26 User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 5 |
| File Size | 101.73 KB |
| Published | July 12, 2026 |
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Frequently Asked Questions
What types of critical equipment should I NOT use this transistor in?
It is not suitable for equipment requiring extreme reliability, such as medical instruments or aerospace machinery.
How much total power can the device safely dissipate?
The total allowable power dissipation ($ ext{P}_{ ext{D}}$) when mounted on a ceramic board is 1.25 W / TOTAL.
What is the continuous drain current rating for this transistor?
The continuous drain current ($ ext{I}_{ ext{D}}$) limit is specified as $-1.5 ext{ A}$.