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ROHM QS5U17 User Guide

Summary

This comprehensive technical manual details the QS5U17, an integrated power component combining a low-voltage N-channel MOSFET with a Schottky Barrier Diode in one package. It is engineered for applications such as load switching and DC/DC conversion, offering fast switching and low on-state resistance at 2.5V drive. The guide provides essential deep dive specifications, including absolute maximum ratings, detailed electrical characteristics (e.g., switching times, capacitances), and usage graphs necessary for power electronics designers integrating reliable solid-state protection into their circuits.

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Page 1 Text Content

QS5U17

Transistors

2.5V Drive Nch+SBD MOS FET QS5U17

Structure External dimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT5

Schottky Barrier DIODE

1.0MAX

Features 1) The QS5U17 combines Nch MOSFET with a 0~0.1

Schottky barrier diode in a single TSMT5 package. (1) (3)(2)

2) Low on-state resistance with fast switching. 0.4 0.16

3) Low voltage drive (2.5V).

Each lead has same dimensions

4) The Independently connected Schottky barrier diode Abbreviated symbol : U17 has low forward voltage.

Applications Load switch, DC / DC conversion

Packaging specifications Equivalent circuit

Package Taping (5) (4)

Type Code TR

Basic ordering unit (pieces)

QS5U17

(1) Gate (2) Source

(3) Anode (4) Cathode

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (5) Drain

Rev.B 1/4

Page Summary Contents For ROHM QS5U17 User Guide

Page 1 QS5U17 Transistors 2.5V Drive Nch+SBD MOS FET QS5U17 Structure External dimensions (Unit : mm) Silicon N-channel MOSFET TSMT5 Schottky Barrier DIODE 1.0MAX Features 1) The QS5U17 combines Nch MOSFET w...
Page 2 QS5U17 Transistors Absolute maximum ratings (Ta=25°C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±2.0 AID Drain current Pulsed ±8.0 AID...
Page 3 IC IN -S QS5U17 -S IS on ) ( IN Transistors Electrical characteristic curves <MOSFET> VDS=10V VGS=4.5V VGS=4.0V Pulsed Pulsed Pulsed Ta=125°C Ta=125°C Ta=125°C Ta=75°C Ta=75°C Ta=75°C Ta=25°C Ta...
Page 4 QS5U17 -S LT Transistors Ta=25°C VDD=15V 125°C ID=2A RG=10Ω Pulsed TOTAL GATE CHARGE : Qg (n C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.10 Dynamic Input Characteristics Fig.11 Forward Cu...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 83.87 KB
Published June 22, 2026
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Frequently Asked Questions

What unique components does the QS5U17 package combine?

It combines an Nch MOSFET with a Schottky Barrier diode in a single TSMT5 package.

Is the QS5U17 suitable for life-critical applications like medical instruments?

No; users must consult a sales representative if the application requires extremely high reliability or endangers human life.

What is the minimum on-state resistance ($R_{DS(on)}$) for this MOSFET?

The static drain-source on-state resistance is rated from 76 to 10⁷ mΩ at specific operation points.

What is the recommended voltage range when using the device?

The drain-source voltage (DSS) limit is 30 V, and the gate-source voltage (VGSS) limit is 12 V.

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