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ROHM QS5K2 User Guide

Summary

Technical datasheet for ROHM QS5K2 dual N-channel MOSFET in space-saving TSMT5 surface-mount package featuring built-in G-S protection diode and low on-resistance optimized for 2.5V gate drive voltage. Features low on-resistance (RDS(ON) = 71mΩ typical at VGS = 4.5V, ID = 2A; 76mΩ typical at VGS = 4.0V, ID = 2A; 100mΩ typical at VGS = 2.5V, ID = 2A; 110mΩ typical at VGS = 2.5V, ID = 2A), compact TSMT5 package saving PCB area in high-density assemblies, and built-in ESD protection diode between g

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Page 1 Text Content

QS5K2

Transistors

2.5V Drive Nch+Nch MOSFET QS5K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TSMT5

1.0MAX

Features 0.950.95 0.7

1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). 0~0.1

Applications

Each lead has same dimensions

Switching

Abbreviated symbol : K02

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

QS5K2

∗1 ∗1 (1) Tr1 Gate (2) Tr1 Source

Tr2 Source 0. 3~ 0.

(3) Tr2 Gate (4) Tr2 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (5) Tr1 Drain

Absolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2>

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±2.0 AID

Drain current

Pulsed ±8.0 AIDP Source current Continuous 0.8 AIS

(Body diode) ∗1

Pulsed 3.2 AISP ∗2 1.25 W / TOTAL

Total power dissipation PD

W / ELEMENT0.9 Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

Channel to ambient Rth(ch-a)

∗ Mounted on a ceramic board

Rev.A 1/3

Page Summary Contents For ROHM QS5K2 User Guide

Page 1 QS5K2 Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT5 1.0MAX Features 0.950.95 0.7 1) Low On-resistance. 3) Space saving, small surface moun...
Page 2 QS5K2 Transistors Electrical characteristics (Ta=25°C) &lt;It is the same characteristics for the Tr1 and Tr2&gt; Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=12V, V...
Page 3 IN ID IC IN -S QS5K2 IT p F -S IS on ) ( Transistors Electrical characteristics curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=0V VGS=4.5V ID=2A RG=10Ω RG=10Ω Pulsed Pulsed td(off) td(on) I...
Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 4
File Size 62.45 KB
Published June 22, 2026
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Frequently Asked Questions

What is the maximum drain current (ID) this MOSFET can handle?

The continuous Drain current is specified as $\pm 2.0 \text{ A}$, and the pulsed rating is $\pm 8.0 \text{ A}$.

What is the recommended total power dissipation (PD)?

The maximum specified total power dissipation is $0.9 \text{ W}$ per element.

How does the thermal resistance affect ambient temperature?

The channel to ambient thermal resistance ($R_{\theta(\text{ch-a})}$) is listed as $139^{\circ}\text{C/W}$ when mounted on a ceramic board.

What is the gate-source threshold voltage ($V_{GS(th)}$)?

The typical gate threshold voltage ($V_{GS(th)}$) ranges from $0.5 \text{ V}$ to $1.5 \text{ V}$.